Resistive switching of vertically aligned carbon nanotube by a compressive strain

Il’ina, M. V.; Blinov, Yuriy F.; Il’in, O. I.; Климин, В. С.; Агеев, О. А.

doi:10.1117/12.2266762

Cited by 3 publications

(1 citation statement)

References 15 publications

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“…The height of the VA CNT is not displayed correctly on the STM image due to the peculiarities of measuring the VA CNT array by the STM [36]. Based on the CVC of the individual VA CNT (Figure 8b), it can be concluded that the individual VA CNT exhibits two conduction states: high resistance when the voltage is varied from 0 to 10 V and low resistance when the voltage varies from 10 to 0 V, which is due to the manifestation of a memristor effect in VA CNT [3,26,29,39,40]. The low-resistance state of the VA CNT was used to determine the resistance of the nanotube, since there is no additional resistance in VA CNT associated with the internal electric field in the nanotube [3,40].…”

Section: A Technique For Determining the Resistivity Of Vertically Almentioning

confidence: 99%

Scanning Probe Techniques for Characterization of Vertically Aligned Carbon Nanotubes

Il’ina¹,

Il’in²,

Smirnov³

et al. 2019

Atomic-Force Microscopy and Its Applications

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This chapter presents the results of experimental studies of the electrical, mechanical and geometric parameters of vertically aligned carbon nanotubes (VA CNTs) using scanning probe microscopy (SPM). This chapter also presents the features and difficulties of characterization of VA CNTs in different scanning modes of the SPM. Advanced techniques for VA CNT characterization (the height, Young's modulus, resistivity, adhesion and piezoelectric response) taking into account the features of the SPM modes are described. The proposed techniques allow to overcome the difficulties associated with the vertical orientation and high aspect ratio of nanotubes in determining the electrical and mechanical parameters of the VA CNTs by standard methods. The results can be used in the development of diagnostic methods as well as in nanoelectronics and nanosystem devices based on vertically aligned carbon nanotubes (memory elements, adhesive structures, nanoelectromechanical switches, emission structures, etc.).

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Section: A Technique For Determining the Resistivity Of Vertically Almentioning

confidence: 99%

Scanning Probe Techniques for Characterization of Vertically Aligned Carbon Nanotubes

Il’ina¹,

Il’in²,

Smirnov³

et al. 2019

Atomic-Force Microscopy and Its Applications

View full text Add to dashboard Cite

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Critical pressure during the formation of carbon nanotubes by the method of plasma chemical vapor deposition

Климин

Rezvan

Morozova

2019

J. Phys.: Conf. Ser.

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The critical pressure of acetylene required for the formation of nanotubes on nickel catalytic centers of a given size was calculated by plasma chemical vapor deposition. It has been established that for a stable growth of carbon nanotubes on a catalytic center with a diameter of 20 nm, the critical pressure of acetylene should be 1.9 Pa, while the growth time of carbon nanotubes in length of 5 μm is 131 sec. Nickel was used as a material for the formation of catalytic centers. In the calculations, the averaged parameters of carbon nanotubes were used. This analysis allowed to form a number of criteria for the materials of the underlayer and catalytic centers, to obtain an array of carbon nanotubes with a high degree of verticality.

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Effects of plasma on the formation of bulk nanoscale structures with lateral dimensions on the surface of GaAs

Климин

Rezvan

Солодовник

et al. 2019

J. Phys.: Conf. Ser.

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In this work, the effect of plasma on the formation of bulk nanoscale structures with lateral dimensions on the GaAs surface was studied. The relative change in the area of the bulk structures in different crystallographic directions is demonstrated, in comparing the before and after the operations of modification and profiling with a successive change in the etching time from 0.5 to 2 minutes. The obtained data in the course of the study showed that when applying this technology for producing nanoscale structures, it is necessary to take into account a number of parameters, such as the crystallographic direction of the substrate, the etching time, and the formation voltage of oxide nanostructures.

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Resistive switching of vertically aligned carbon nanotube by a compressive strain

Cited by 3 publications

References 15 publications

Scanning Probe Techniques for Characterization of Vertically Aligned Carbon Nanotubes

Scanning Probe Techniques for Characterization of Vertically Aligned Carbon Nanotubes

Critical pressure during the formation of carbon nanotubes by the method of plasma chemical vapor deposition

Effects of plasma on the formation of bulk nanoscale structures with lateral dimensions on the surface of GaAs

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