Resistive Switching of the Tetraindolyl Derivative in Ultrathin Films: A Potential Candidate for Nonvolatile Memory Applications

Abstract

Bipolar resistive switching using organic molecule is very promising for memory applications owing to their advantages, such as simple device structure, low manufacturing cost, stability, and flexibility. Herein we report Langmuir–Blodgett (LB) and spin-coated-film-based bipolar resistive switching devices using organic material 1,4-bis­(di­(1H-indol-3-yl)­methyl)­benzene (Indole1). The pressure–area per molecule isotherm (π–A), Brewster angle microscopy (BAM), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to formulate an idea about the organization and morphology of the organic material onto thin films. On the basis of the device structure and measurement protocol, it is observed that the device made up of Indole1 shows nonvolatile resistive random access memory (RRAM) behavior with a very high memory window (∼106), data sustainability (5400 s), device yield (86.7%), and repeatability. The oxidation–reduction process and electric-field-driven conduction are the keys behind such switching behavior. Because of very good data retention, repeatability, stability, and a high device yield, the switching device designed using compound Indole1 may be a potential candidate for memory applications.

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“… 88 This happens mainly due to the presence of traps across the active layer. 88 In the present case, the traps may be created in the functional layer of the device during PS or PS–DOPC layer deposition to form switching devices. 87 Also, the chemical composition or functional groups present in the active layer material may induce such trap formation.…”

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“…This observation negates the possibility that the observed switching is due to the formation of a conducting metal filament . Usually LRS resistances increase for such metallic filament formation . The role of an electrochemical oxidation–reduction process in the observed switching has also been investigated by cyclic voltammetry (CV) measurement.…”

“…The role of an electrochemical oxidation–reduction process in the observed switching has also been investigated by cyclic voltammetry (CV) measurement. However, the absence of any distinct oxidation–reduction peaks in the CV curve of the PS deposited onto electrode eliminates the involvement of an oxidation–reduction process in the observed switching . To check the effect of the device thickness on switching, an Au/PS/ITO device has been prepared with the PS films having two different thicknesses, and their I–V curves were recorded.…”

“…46 Usually LRS increase for such metallic filament formation. 47 The role of an electrochemical oxidation−reduction process in the observed switching has also been investigated by cyclic voltammetry (CV) measurement. However, the absence of any distinct oxidation− reduction peaks in the CV curve of the PS deposited onto electrode eliminates the involvement of an oxidation− reduction process in the observed switching.…”

“…However, the absence of any distinct oxidation− reduction peaks in the CV curve of the PS deposited onto electrode eliminates the involvement of an oxidation− reduction process in the observed switching. 47 To check the effect of the device thickness on switching, an Au/PS/ITO device has been prepared with the PS films having two different thicknesses, and their I−V curves were recorded. An increase in V Th has been observed with the increase in the PS layer thickness (Figure S3 of the SI), indicating the involvement of electric field driven conduction in the switching process.…”