Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

Abstract

Two-dimensional polyimide covalent organic framework (2D PI-NT COF) films were constructed on indium-tin-oxide (ITO)-coated glass substrates to fabricate two-terminal sandwiched resistive memory devices. The 2D PI-NT COF films condensated from the reaction between 4,4',4''triaminotriphenylamine and naphthalene-1,4,5,8-tetracarboxylic dianhydride under solvothermal conditions demonstrated high crystallinity, good orientation preference, tunable thickness, and low surface roughness. The well-aligned electron donor (triphenylamine unit) and acceptor (naphthalene diimide unit) arrays rendered the 2D PI-NT COF film a promising candidate for electronic applications. The memory devices based on the 2D PI-NT COF films exhibited the typical write-once-read-many-time resistive switching behavior under the operating voltage of +2.30 V on the positive scan and -2.64 V on the negative scan. A high ON/OFF current ratio (>10 6 for the positive scan and 10 4 ~10 6 for the negative scan) and long-term retention time indicated the high fidelity, low error, and high stability of the resistive memory devices. The memory behavior was attributed to an electric field-induced intramolecular charge transfer in the ordered donor-acceptor system which provided the effective charge transfer channels for injected charge carriers. This work represents the first example that explores the resistive memory properties of 2D PI-COF films, shedding light on the potential application of 2D COFs as information storage media.

Towards High‐Performance Resistive Switching Behavior through Embedding a D‐A System into 2D Imine‐Linked Covalent Organic Frameworks

“…We think this is because the 2D framework of COF‐TT‐BT parallel to ITO substrate resulting in vertically aligned π columns, and thereby providing preassigned pathways so that electrons and holes can be transported through π‐cloud overlap [67] . Hence, the crystallinity contributes to facilitating the performance and stability of resistive switching memory devices, as also found by Liu and co‐workers [55] . As far as we know, COF‐TT‐BT is a state‐of‐the‐art 2D COF for nonvolatile memristors, and even one of the best resistive switching materials as compared with other novel 2D materials.…”

“…prepared crystalline 2D porphyrinic COF films utilizing surfactant‐monolayer‐assisted interfacial synthesis strategy for a hybrid learning–erasing–forgetting memory as the pseudogate [54] . Subsequently, a write‐once–read‐many‐times (WORM) resistive switching memory device based on highly ordered 2D donor–acceptor (D‐A) COF film, PI‐NT , was reported by Liu and co‐workers [55] . The WORM memristor possessed bipolar current–voltage characteristics with a superior ON/OFF current ratio of 10 6 for positive voltage scan and 10 4 –10 6 for the negative scan, but a moderate retention time of 180 min.…”

Electroactive covalent organic frameworks: a new choice for organic electronics

“…The COF can also be used as an active material in memory devices [88]. By utilizing the charge accumulation at the interface between 2DBECOF-PP and SiO 2 , a FET-type memory device can be fabricated with typical hysteresis behavior during voltage sweeping, leading to a learning-erasing-forgetting memory process [89].…”

Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

“…COF-based materials have been developed for obtaining highly efficient organic semiconductors, such as FETs and photodetector devices. Moreover, the progress of thin-film processability and device integration has endowed COFs with extensive potential in resistive memory and memristor applications [47,108,109].…”

“…More recently, Sun et al [108] reported a surface-grown donor-acceptor type 2D polyimide COF film (namely PI-NT COF), which was synthesized from the condensation between the electron-donating 4,4′,4″-triaminotriphenylamine and the electron-withdrawing naphthalene-1,4,5,8-tetracarboxylic dianhydride under solvothermal conditions. This 2D PI-NT COF film exhibited high crystallinity, good orientation preference, tunable thickness, and low surface roughness.…”