Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO3/Al/SrZrTiO3/ITO with Embedded Al Layer

Abstract

The SrZrTiO3 (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 107, lower operation voltage (VSET = −0.8 V and VRESET = 2.05 V), uniform film, and device stability of more than 105 s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed.

Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor

“…In Figure , the switching mechanism of the Pt/WO x /ITO device is represented using an energy band diagram. The work functions of the top-Pt and bottom-ITO electrodes are 5.65 were 4.4 eV, respectively. , Additionally, the electron affinity and band gap of the WO x film were 3.64 and 3.01 eV, respectively (Figure a) . Owing to the difference in work functions of the two metallic electrodes, asymmetric Schottky barriers are formed at the Pt/WO x and WO x /ITO interfaces, with the larger of the two barriers formed at the Pt/WO x surface, as shown in Figure a.…”