Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell

Fabrication of ZrO2 layer through electrohydrodynamic atomization for the printed resistive switch (memristor)

“…The technique deployed in the current research work provides the cost-effective, rapid processing and friendly environment fabrication of the memristive devices. Resistive switching has been observed in ZrO 2 for many years [19][20][21][22][23][24] due to its unique properties: including high ionic conductivity, multiple stable oxidation states, low electron affinity, work compatibility at high temperature and fabrication friendly. The deposited thin film has been characterized through SEM, XRD and XPS analysis.…”

Electrical Conduction and Resistance Switching Mechanisms of Ag/ZnO/Ti Structure

“…Resistance random access memory (ReRAM) has attracted extensive attention for their applications to nonvolatile data storage technologies due to its simple structure, low power consumption, low cost, nonvolality and high speed performance [1][2][3][4][5][6][7][8][9][10][11][12]. The resistance switching was observed from various materials, such as perovskite oxides (Pr0.7Ca0.3MnO3, La0.7Ca0.3MnO3, Cr-dopedSrZrO3, Cr-dopedSrTiO3…) [1][2][3][4][5][6][7][8][9], transition metal oxides (NiO, Ti, CuO, ZrO2,ZnO…)… [10][11][12] We have already published our research on the resistance switching effect in Pt / Cr-doped SrTiO3 / La0.5Sr0.5CoO3structure [5][6][7][8][9].…”

“…The resistance switching was observed from various materials, such as perovskite oxides (Pr0.7Ca0.3MnO3, La0.7Ca0.3MnO3, Cr-dopedSrZrO3, Cr-dopedSrTiO3…) [1][2][3][4][5][6][7][8][9], transition metal oxides (NiO, Ti, CuO, ZrO2,ZnO…)… [10][11][12] We have already published our research on the resistance switching effect in Pt / Cr-doped SrTiO3 / La0.5Sr0.5CoO3structure [5][6][7][8][9].…”

Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films

“…Therefore, we supposed that complete Ag CF was formed in LRS. 7,23 Yang et al suggested that, due to the low mobility of metal ions in a-Si, ions are reduced at some positions inside the a-Si layer after acquiring electrons injected from the counter electrode, so the conducting pathway consists of a chain of metal nanoparticles instead of metallic CF in traditional sense. 24 On the other hand, a characteristic feature of Ag nucleation is the existence of an overpotential threshold called critical overpotential, below which the nucleation rate is practically zero.…”