Resistive Switching in Polyvinylpyrrolidone/Molybdenum Disulfide Composite-Based Memory Devices

Dlamini, Zolile Wiseman; Vallabhapurapu, S.; Srinivasan, A.; Wu, Songhua; Vallabhapurapu, Vijaya Srinivasu

doi:10.12693/aphyspola.141.439

Cited by 4 publications

(3 citation statements)

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“…After conducting the electroforming scan, we proceeded to perform full cycle voltage scans (0 → +V max → 0 → −V max → 0) in order to analyze the memory behavior of the devices. This methodology has been previously documented [6,12,13].…”

Section: Transport and Memory Studymentioning

confidence: 99%

Resistive Switching Property of Raw Organic Cow Milk for Memory Application

Dlamini

Vallabhapurapu

2023

Sustainability

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Organic material-based computer memory devices are critical for lowering the amount of electronic waste. Toward this end, we here present the resistive switching property of metal-insulator-metal type devices consisting of active layers made of raw organic cow milk. Our devices were made up of fat-free, medium cream, and full cream raw cow milk active layers sandwiched between indium-doped tin oxide and silver electrodes. These devices were created without the use of heat or electricity, and because they use cow milk as their active layers, they do not pollute the environment. The medium-fat milk film had a higher weight percentage of metallic ions than the fat-free and full-cream milk films, according to energy-dispersive X-ray spectroscopy analysis of the active layers. As a result, electrical characterization and memory studies revealed that conductive filaments driven by a space-charge-limited conduction mechanism were responsible for the “S-type” memory characteristics of the medium-fat milk-based device, with switching at remarkably low VSET=+0.48V and VRESET=−0.25V. Furthermore, with over 30 write/erase cycles, this device demonstrated better non-volatile computer memory device prospects. Hoping conduction-driven conductive filaments, on the other hand, were linked to the behavior of devices that use fat-free and full-cream milk. Overall, our findings show that the fat and ion content of milk plays an important role in the morphology, transport, and switching of these devices.

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Section: Transport and Memory Studymentioning

confidence: 99%

Resistive Switching Property of Raw Organic Cow Milk for Memory Application

Dlamini

Vallabhapurapu

2023

Sustainability

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“…compared the resistive switching behavior in composite‐based memory devices by using different active layers and top electrode configurations. [ 26 ] Yang et al. choice of ion transfer material was an important factor in the determination of the nucleation side.…”

Section: Introductionmentioning

confidence: 99%

“…Dlamini et al compared the resistive switching behavior in composite-based memory devices by using different active layers and top electrode configurations. [26] Yang et al choice of ion transfer material was an important factor in the determination of the nucleation side. [23,27] The studies have revealed the potential of polyvinylpyrrolidone as an active layer in resistive switching devices for fundamental research.…”

Section: Introductionmentioning

confidence: 99%

Multilevel Reset Dependent Set of a Biodegradable Memristor with Physically Transient

Shaikh,

Nguyen,

Jeon

et al. 2023

Advanced Science

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The electronic device, with its biocompatibility, biodegradability, and ease of fabrication process, shows great potential to embed into health monitoring and hardware data security systems. Herein, polyvinylpyrrolidone (PVP) biopolymer is presented as an active layer, electrochemically active magnesium (Mg) as a metal electrode, and chitosan‐based substrate (CHS) to fabricate biocompatible and biodegradable physically transient neuromorphic device (W/Mg/PVP/Mg/CHS). The I–V curve of device is non‐volatile bipolar in nature and shows a unique compliance‐induced multilevel RESET‐dependent‐SET behavior while sweeping the compliance current from a few microamperes to milliamperes. Non‐volatile and stable switching properties are demonstrated with a long endurance test (100 sweeps) and retention time of over 104 s. The physically transient memristor (PTM) has remarkably high dynamic RON/ROFF (ON/OFF state resistance) ratio (106 Ω), and when placed in deionized (DI) water, the device is observed to completely dissolve within 10 min. The pulse transient measurements demonstrate the neuromorphic computation capabilities of the device in the form of excitatory post synaptic current (EPSC), potentiation, depression, and learning behavior, which resemble the biological function of neurons. The results demonstrate the potential of W/Mg/PVP/Mg/CHS device for use in future healthcare and physically transient electronics.

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