Resistive switching in polymethyl methacrylate thin films

Mangalam, Jimmy; Agarwal, Shivani; Resmi, A. N.; Sundararajan, M.; Jinesh, K. B.

doi:10.1016/j.orgel.2015.11.017

Cited by 44 publications

(29 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On moving to the area of flexible and printed electronics, the number of suitable materials turns out to be not large, allowing organic and graphene‐based materials to come to the forefront. Typical of organic materials is the degradation of their properties with time; that is why with the passage to the inorganic materials for flexible and printed electronics a certain breakthrough in the quality of fabricated structures is expected to be achieved.…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Ivanov

Гутаковский

Kotin

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

and sulfides (MoS), [10][11][12] have been studied. Extensive studies of composites prepared from conducting and dielectric materials, whose combination enhances the resistive switching effect and improves its stability are underway. For instance, a resistive switching effect with the relation of current in low-resistive (ON) and highresistive (OFF) states amounting to three to five orders was observed in composites consisting of a polymer base and nonorganic nanoparticles, [13][14][15][16][17][18][19][20][21] fully organic polymers, [22] films consisting of a polymer in combination with carbon nanotubes, [23,24] titanium nanotubes, [25] or Cu-SiO 2 nanofilaments. [26] Also, it was shown that graphene oxide (GO) based structures with Au nanoparticles can demonstrate an ON/ OFF current ratio reaching nine orders. [27] Switchings in films based on vanadium and its oxides present a matter of much discussion. Both the magnitude and pattern of the effect depend on the composition of the oxide, [28,29] on the structure of the film (continuous chemical vapor deposition (CVD)-grown film or suspension consisting of separate nanoparticles), [30,31] and on the synthesis and formation conditions of the structures. [32] In the case of VO 2 , a temperature-dependent resistive switching effect was observed: for a VO 2 -based film to be switched into the low-resistive state, heating of the samples to 60-70 °C was required. [33] VO x films (a mixed-valency phase which can contain various compounds, for instance, V 2 O 3 , V 3 O 5 , V 3 O 7, etc. [34] ), synthesized using CVD or application of a nanoparticle suspension (crystal hydrates prepared by sol-gel method, incorporating water molecules V 2 O 5 •nH 2 O with n ≤ 2, and dependent on the annealing temperature of the sample), [35] demonstrate a resistive switching effect due to the action of an electric field. In the majority of cases, this effect was attributed to the formation of filaments which, with the passage of time, (under the action of the field) can become indestructible because of the irreversible migration of oxygen, with the resistive cell no longer returning into the high-resistive state. Oxide V 2 O 5 in the context of the irreversible migration of oxygen proved to be a more stable material, with the resistive switching effect observed without additional heating of the structure. On the whole, in vanadium oxide (V 2 O 5 ) compounds a resistive switching effect with an ON/OFF current Composite films consisting of fluorinated graphene flakes with vanadium oxide (V 2 O 5 ) nanoparticles exhibit a stable bipolar resistive switching effect that depends on the size of the composite particles, on the proportion between the film components, on the heat-treatment conditions of the films (or on the hydration degree of V 2 O 5 nanoparticles), and on the area of the structures. The ON/OFF current ratio of printed crossbar structures reaches 10 6 -10 9 for films 20-50 nm thick, with the switching voltage varying in the range from 1.5 to 3.7 V, 30 ns time for structure switchi...

show abstract

Section: Introductionmentioning

confidence: 99%

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Ivanov

Гутаковский

Kotin

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…The red-shift in emission peak position as the excitation energy decrease is commonly regarded as the indicative of the various surface states and size distribution [3,18,20,30]. As suggested in the previous paper [28], the interfacial polarization between dielectric polymers can takes place on application of an electric field (E 0 ) due to higher molecular spatial ordering. 2(d).…”

Section: Resultsmentioning

confidence: 91%

Ferroelectric-like hysteresis effect observed in carbon quantum dots sandwiched between PMMA and PEDOT:PSS hybrid film

Zhang

Shi

et al. 2016

RSC Adv.

View full text Add to dashboard Cite

The ferroelectric-like hysteretic I-V effect was observed in the multilayer film of PMMA/carbon quantum dots (CDs)/PEDOT:PSS using the ITO and Al metals as the electrodes. The multilayer film exhibited two different resistance states and larger hysteresis window under the electric field compared to the film without CDs addition. The influence of additional CDs layer on the short circuit current (I sc ) and open circuit voltage (V oc ) values is related to the interfacial polarization between PMMA and PEDOT:PSS layers. The introduction of CDs layer intensifies interfacial polarization for two dielectric layers, resulting in the larger hysteresiswindow. An interfacial polarization field E´ increases with the external electric field increasing and reaches a maximum value at the threshold voltage V oc of ±15 V. The switch reliability of device is operated over 5×10 3 times in a succession of periodic pulses without any performance degradation.

show abstract

“…As shown in Figures b, well‐defined memory characteristics of the distinct binary nature were observed in the unipolar mode. The current ratio from the LRS to the HRS was about 10 4 at V read = 1 V. This is much higher than that of the Ag/PMMA‐based memristor reported previously, which is one of typical ECM memristors . Note that the thickness of the polymer electrolyte predominantly governs the leakage current of the HRS in the organic ECM device.…”

mentioning

confidence: 67%

“…Note that the CF growth into the free volume of voids (or nanopores) of the polymer electrolyte, formed in a bicontinuous fashion, is fundamentally different from that into inorganic solid electrolytes (e.g., amorphous and crystalline oxides) where the ion transport occurs mainly along grain boundaries or disclinations. Another difference is that the organic ECM memristor requires a relatively high operating voltage inherent to a thick layer of the polymer electrolyte (typically about several hundreds of nanometers) since a thin polymer layer often results in high leakage current with undesirable defects such as pin‐holes . Thus, the reduction of the operating voltage remains challenging for the organic ECM memristor.…”

mentioning

confidence: 99%

Organic Flexible Memristor with Reduced Operating Voltage and High Stability by Interfacial Control of Conductive Filament Growth

Lee

Park

Keum

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Herein, the underlying mechanisms for the growth of conductive filaments (CFs) at a metal–polymer electrolyte interface through ion migration in organic electrochemical metallization (ECM) memristor are presented. It is observed that the free volume of voids (nanopores) in the polymer electrolyte serves as the pathways of metal‐cations whereas the interfacial topography between an active electrode and a polymer electrolyte determines the nucleation sites of the CFs. The growth kinetics of the CFs and the resultant resistive memory are found to vary with the molecular weight of the polymer electrolyte and the metal protrusions at the interface. Our direct observations show that the free volume of voids of the polymer electrolyte, varied with the molecular weight, dictates the ion transport for the growth and the disruption of the CFs. Our organic ECM‐based memristor with a hetero‐electrolyte exhibits high mechanical flexibility, low switching voltages reduced by about three times compared to those of conventional devices, and stable memory retention for longer than 104 s under repeated cycles of bending.

show abstract

Resistive switching in polymethyl methacrylate thin films

Cited by 44 publications

References 32 publications

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Ferroelectric-like hysteresis effect observed in carbon quantum dots sandwiched between PMMA and PEDOT:PSS hybrid film

Organic Flexible Memristor with Reduced Operating Voltage and High Stability by Interfacial Control of Conductive Filament Growth

Contact Info

Product

Resources

About

Resistive switching in polymethyl methacrylate thin films

Cited by 44 publications

References 32 publications

Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles

Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles

Ferroelectric-like hysteresis effect observed in carbon quantum dots sandwiched between PMMA and PEDOT:PSS hybrid film

Organic Flexible Memristor with Reduced Operating Voltage and High Stability by Interfacial Control of Conductive Filament Growth

Contact Info

Product

Resources

About

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles