Resistive switching in microscale anodic titanium dioxide-based memristors

Aglieri, Vincenzo; Zaffora, Andrea; Lullo, G.; Santamaria, Monica; Franco, Francesco Di; Cicero, Ugo Lo; Mosca, Mauro; Macaluso, Roberto

doi:10.1016/j.spmi.2017.10.031

Cited by 41 publications

(22 citation statements)

References 35 publications

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“…Another critical parameter on the synthesis process of resistive switching devices is the metal salt precursors, which are subdivided into three counter anions groups; [ 100 ] oxidants (hydrated nitrates), [ 72,79,80,98,101–121 ] reducers (alkoxides, [ 117,122–125 ] acetates, [ 72,76,78,79,104,105,109,111,113–118,126–153 ] and acetylacetonates [ 81,134,144,154–157 ] ), and neutrals (chlorine‐based). [ 63,71,103,107,110,112,116,119,125,132,158–164 ] Among these, oxidant counter ions are preferable due to the high oxidizing power (negative charge), greater solubility in water or polar organic solvents and low decomposition temperature, which are related to the electronic interactions between the metal and the nitrate group, as shown in Figure 9c. [ 99,165,166 ] Their low processing temperature is related to the high volatility of the decomposition byproducts, leading to a higher purity in the final product.…”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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“…With this method, the composition, thickness, and structure can be controlled by choosing an appropriate substrate, electrolyte, and electrochemical conditions. Only a few studies have addressed this method of fabricating TiO 2 -based memristors (Miller et al, 2010 ; Yoo et al, 2013 ; Aglieri et al, 2018 ; Zaffora et al, 2018 ). Recently, promising advances in anodizing to form a compact topology of memristors (8–29 nm thickness and 4 μm 2 feature area) have been demonstrated (Aglieri et al, 2018 ).…”

Section: Synthesis and Fabricationmentioning

confidence: 99%

Memristive TiO2: Synthesis, Technologies, and Applications

et al. 2020

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Titanium dioxide (TiO 2 ) is one of the most widely used materials in resistive switching applications, including random-access memory, neuromorphic computing, biohybrid interfaces, and sensors. Most of these applications are still at an early stage of development and have technological challenges and a lack of fundamental comprehension. Furthermore, the functional memristive properties of TiO 2 thin films are heavily dependent on their processing methods, including the synthesis, fabrication, and post-fabrication treatment. Here, we outline and summarize the key milestone achievements, recent advances, and challenges related to the synthesis, technology, and applications of memristive TiO 2 . Following a brief introduction, we provide an overview of the major areas of application of TiO 2 -based memristive devices and discuss their synthesis, fabrication, and post-fabrication processing, as well as their functional properties.

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“…More recently, efforts were made in the direction of producing real devices and testing the material at the microscale. Anodizing was performed on tantalum [81] and on titanium [84] metallic films deposited on glass, in borate buffer solution or in diluted phosphoric acid, respectively, at cell voltages of 5-20 V. Micrometer-size conductive metal pads (either Pt or Cu) were then deposited by lithography, allowing better characterization of the devices, which also included endurance evaluation.…”

Section: Anodic Oxides Showing Memristive Behaviormentioning

confidence: 99%

“…In all abovementioned cases, the anodic oxides showed parameters compatible with requirements identified for resistive switching materials: high R off /R on ratio (> 10, with best values in the order of 80), set/reset values lower than 1 V and possibility to obtain multilevel switching [81]. Moreover, in several works, the oxides produced were electroforming-free: this can be ascribed to the anodic oxidation process itself, which is known to generate non-stoichiometric oxides, therefore the content of oxygen vacancies natively present in the oxide is already sufficient to produce the switching [49,83,84].…”

Section: Anodic Oxides Showing Memristive Behaviormentioning

confidence: 99%

Memristive Anodic Oxides: Production, Properties and Applications in Neuromorphic Computing

Brenna¹,

Corinto²,

Noori³

et al. 2018

Advances in Memristor Neural Networks - Modeling and Applications

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Memristive devices generally consist of metal oxide elements with specific structure and chemical composition, which are crucial to obtain the required variability in resistance. This makes the control of oxide properties vital. While CMOS compatible production technologies for metal oxides deposition generally involve physical or chemical deposition pathways, we here describe the possibility of using an electrochemical technique, anodic oxidation, as an alternative route to produce memristive oxides. In fact, anodization allows to form a very large range of oxides on the surface of valve metals, such as titanium, hafnium, niobium and tantalum, whose thickness, structure and functional properties depend on process parameters imposed. These oxides may be of interest to build neural networks based on memristive elements produced by anodic oxidation.

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Resistive switching in microscale anodic titanium dioxide-based memristors

Cited by 41 publications

References 35 publications

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Memristive TiO2: Synthesis, Technologies, and Applications

Memristive Anodic Oxides: Production, Properties and Applications in Neuromorphic Computing

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