Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer

Jeong, Hyomin; Kim, Jiye; Kim, Dong Yeong; Kim, Jae-Won; Moon, Seokho; Okello, Odongo Francis Ngome; Lee, Sang‐Min; Hwang, Hyunsang; Choi, Si‐Young; Kim, Jong Kyu

doi:10.1021/acsami.0c12012

Cited by 22 publications

(16 citation statements)

References 45 publications

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“…The single peak located around 1365 cm −1 corresponding to E 2g phonon vibration mode, indicating the high quality of few-layer sp 2 -hybridized h-BN on SiO 2 substrate. [33] Top-view scanning electron microscopy (SEM) images of flat multilayer h-BN on Cu foil before wet transfer are presented in Figure S4 (Supporting Information) where obvious polycrystalline domain is observed. X-ray photoelectron spectroscopy (XPS) was used to characterize the CVD grown h-BN before (Figure S5, Supporting Information) and after wet transfer process (Figure 2b,c).…”

Section: Resultsmentioning

confidence: 99%

A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

Mao

Ding

et al. 2022

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2D materials with intriguing properties have been widely used in optoelectronics. However, electronic devices suffered from structural damage due to the ultrathin materials and uncontrolled defects at interfaces upon metallization, which hindered the development of reliable devices. Here, a damage‐free Au/h‐BN/Au memristor is reported using a clean, water‐assisted metal transfer approach by physically assembling Au electrodes onto the layered h‐BN which minimized the structural damage and undesired interfacial defects. The memristors demonstrate significantly improved performance with the coexistence of nonpolar and threshold switching as well as tunable current levels by controlling the compliance current, compared with devices with evaporated contacts. The devices integrated into an array show suppressed sneak path current and can work as both logic gates and latches to implement logic operations allowing in‐memory computing. Cross‐sectional scanning transmission electron microscopy analysis validates the feasibility of this nondestructive metal integration approach, the crucial role of high‐quality atomically sharp interface in resistive switching, and a direct observation of percolation path. The underlying mechanism of boron vacancies‐assisted transport is further supported experimentally by conductive atomic force microscopy free from process‐induced damage, and theoretically by ab initio simulations.

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Section: Resultsmentioning

confidence: 99%

A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

Mao

Ding

et al. 2022

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“…[257][258][259][260][261] ii) Atomically thin nature of h-BN can lead to ultrafast switching speed, low energy consumption, and high-density 3D integration. [260,[262][263][264][265][266][267][268][269][270] iii) The high breakdown strength and low variability of h-BN can improve device reliability and variability. [257,260,[271][272][273] iv) Excellent thermal and chemical stabilities provide sustainable operation in HRS and low resistive states (LRS) under long continuous electrical stress.…”

Section: Resistive Switching Mediummentioning

confidence: 99%

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

et al. 2022

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Hexagonal boron nitride (h-BN), a member of 2D materials, has an analogous crystal structure to graphene, yet, is an insulator having an indirect bandgap of ≈6 eV. [16] h-BN has been explored as the "ideal" substrate and excellent encapsulant [17] for other 2D materials including graphene and transition metal dichalcogenides (TMDs) due to its excellent insulating property, atomically flat surface free of dangling bonds, [18] and charged impurities, and high thermal conductivity. [19,20] Encapsulating other 2D materials with h-BN effectively protects them from local electrical and chemical environment, enabling them to manifest their theoretically expected "intrinsic" properties. In addition, h-BN has been utilized as passive components in 2D vdW electronic devices, such as gate dielectrics and tunneling barriers.Recently, h-BN is attracting intensive research interests, motivated by the variety of outstanding properties, it shows across the fields of quantum optics, [21] electronics, and optoelectronics. [22] For example, despite its indirect-bandgap nature, h-BN showed deep-ultraviolet (DUV) emission with exceptionally high internal quantum efficiency (IQE) comparable to or even higher than single-crystalline direct-bandgap semiconductors. Defects in h-BN are efficient [21,23] and stable sources for single-photon emission over a wide range of wavelengths, from near-infrared (NIR) [24] to nearultraviolet (NUV), [25] at room temperature. The giant lightmatter interaction and strong band-edge absorption offered by h-BN enable the realization of solar-blind DUV photo detection by using h-BN as the active layer where DUV photons are effectively absorbed and create electrical carriers. h-BN has also been adopted as active media for low energy electronic devices, including nonvolatile resistive switching (RS) memory and radio-frequency (RF) devices, in addition to passive components for field-effect transistors (FETs), effective diffusion barriers, and low-k interlayer dielectrics (ILDs).This article aims to review the most recent discoveries of extraordinary properties of h-BN and advancements in emerging photonic and electronic applications. Although there are several well-written review articles on h-BN, [26][27][28][29] this review article focuses on the most recent theoretical discoveries, such as the stacking sequences of h-BN and related optical properties, and the elucidation on how an indirect-bandgap h-BN exhibits strong emission as efficient as a direct-bandgap Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of st...

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“…The resistive random access memory (RRAM) fabricated by hBN materials has been attracting much attention because of its fast operation and high-density integration. [18][19][20][21][48][49][50] The resistive switching (RS) component is the basic unit of RRAM. A sandwiched structure is the most common one with RS material between two metal electrodes.…”

Section: Resistance Switching Characteristics Of Hbn Films After Stri...mentioning

confidence: 99%

Two‐Inch Wafer‐Scale Exfoliation of Hexagonal Boron Nitride Films Fabricated by RF‐Sputtering

Wang

Bai

et al. 2022

Adv Funct Materials

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A film stripping method that allows for liquid phase exfoliation assisted by spin coating polymethyl methacrylate has been investigated, resulting in a two‐inch hexagonal boron nitride (hBN) film to be fully stripped and then transferred. A number of key factors that can influence the stripping and the transferring process of the films grown by sputtering have been systematically analyzed, including different solutions, different concentration of solution and different thickness of films. The morphology and properties of the hBN films before and after stripping have been characterized. The band edge absorption peak of the transferred film is 229 nm and the corresponding optical band gap is 5.50 eV. Such transferred hBN films have been fabricated into transparent resistive switching devices on indium‐tin‐oxide glass, demonstrating a constant resistance window of ≈102 even under different applied voltages. This work systematically studies the stripping process, characterizes the transferred films, and explores the application in the field of resistance switching, which lay a foundation for the further application of hBN materials in optoelectronic devices.

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Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer

Cited by 22 publications

References 45 publications

A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

Two‐Inch Wafer‐Scale Exfoliation of Hexagonal Boron Nitride Films Fabricated by RF‐Sputtering

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