Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol

Ivanov, A. I.; Nebogatikova, N. A.; Kotin, I. A.; Smagulova, S. A.; Antonova, I. V.

doi:10.1088/1361-6528/ab0cb3

Cited by 17 publications

(19 citation statements)

References 74 publications

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“…At the current-voltage characteristics in coordinates ln(I) versus ln(V) corresponding to the space charge limited conduction (SCLC) for crossbar structures, a linear fitting is observed. The same conductive mechanism was found for the case of Ag-FG-PVA-Ag crossbar structures with the FG-PVA active layer, in which GQDs are formed due to low fluorination [12]. SCLC is connected with the carrier tunneling between the traps.…”

Section: Discussionsupporting

confidence: 66%

“…A stable bipolar resistive switching effect with the ON/OFF current ratio amounting from one to 4–5 orders of magnitude is found for two-layer films of partially fluorinated graphene with graphene quantum dots (GQDs) and polyvinyl alcohol [ 12 ]. Resistance switches were observed when the fluorination degree was relatively low (F/C ~20–25%), and quantum dots of graphene are the basis for the FG film conductivity.…”

Section: Introductionmentioning

confidence: 99%

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Memristive FG–PVA Structures Fabricated with the Use of High Energy Xe Ion Irradiation

et al. 2022

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A new approach based on the irradiation by heavy high energy ions (Xe ions with 26 and 167 MeV) was used for the creation of graphene quantum dots in the fluorinated matrix and the formation of the memristors in double-layer structures consisting of fluorinated graphene (FG) on polyvinyl alcohol (PVA). As a result, memristive switchings with an ON/OFF current relation ~2–4 orders of magnitude were observed in 2D printed crossbar structures with the active layer consisting of dielectric FG films on PVA after ion irradiation. All used ion energies and fluences (3 × 1010 and 3 × 1011 cm−2) led to the appearance of memristive switchings. Pockets with 103 pulses through each sample were passed for testing, and any changes in the ON/OFF current ratio were not observed. Pulse measurements allowed us to determine the time of crossbar structures opening of about 30–40 ns for the opening voltage of 2.5 V. Thus, the graphene quantum dots created in the fluorinated matrix by the high energy ions are a perspective approach for the development of flexible memristors and signal processing.

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Section: Discussionsupporting

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Memristive FG–PVA Structures Fabricated with the Use of High Energy Xe Ion Irradiation

et al. 2022

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“…Covalent modification of polymers with 2D or 1D materials through "grafting" and "grafting from" methods is a common and effective method to adjust their electrical properties. [196][197][198][199][200] Ree and co-workers covalently modified fullerene acceptor with carbazole containing polymers, [201] and the as-obtained poly(2-(N-carbazolyl)ethyl methacrylate) end-capped with fullerene (PCzMA-C60) exhibit both bipolar and unipolar rewritable memory characteristics. Chen's group reported a highly soluble conjugated polymer covalently functionalized BP derivative (PDDF-g-BP) and produced a memory device with the structure of ITO/PDDF-g-BP/Au.…”

Section: Polymer Complex Resistive Switching Materialsmentioning

confidence: 99%

Organic Memory and Memristors: From Mechanisms, Materials to Devices

Yuan

Liu

Chen

et al. 2021

Adv Elect Materials

116

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silicon-based semiconductor devices are encountering constraints of downscaling with significant data fidelity issues and unaffordable manufacturing cost at the impending 2-3 nm nodes, hindering their direct application for both flexible and very (ultra) large-scale integration (VLSI). [4] One way to solve this problem is by developing in-memory computing technologies. By using new materials and different mechanisms to design and implement memory cells, the "von Neumann bottleneck" can be solved, and the semiconductor industry can maintain an exciting development trend.When dealing with 21st-century applications such as real-time voice recognition, image processing, and big-data analysis, as the huge amount of involved information is usually accessed unpredictably, it may take many processor cycles to fetch the target data from the memory hierarchy and the computer may stall due to the unavailability of the data, resulting in loss of computation performance and power efficiency. Compared with the human brain, modern supercomputers have faster operation speed but much lower efficiency. The human brain transmits signals with neurons. The neural network consists of 10 11 neurons and is connected with 10 15 synapses. The synapse is the nanogap between neurons, which permits electrical or chemical signal transmission. [5,6] Benefited from the neural network structure, the human brain can deal with recognition tasks effectively. When processing massively parallel information, each synapse event consumes about 1-100 fJ. [7] The human brain has strong stability because the neural network does not collapse with the death of nerve cells. Moreover, when humans interact with new things, the neural network will automatically learn and update without the need for human readjustment. [8] In order to execute artificial intelligence algorithms with energy efficiency performance and performance comparable to that of the brain, it is hoped to simulate the function of neural networks (for example, the interconnection of biological synapses and neurons) through the inherent combination of information storage and processing on the device scale. [9] Fortunately, memristor, another resistive switching device beyond the bistable memories, may be important in computer systems before the von Neumann architecture.Memristor was conceived by Chua based on the theory of the symmetry arguments in 1971 and experimentally demonstrated by Strukov et al. [10,11] Memsietor can be defined as a two-terminal device with nonvolatile resistance which can be modulated by light, electricity, heat, and so on. [12] Unlike devices that display a Facing the exponential growth of data digital communications and the advent of artificial intelligence, there is an urgent need for information technologies with huge storage capacity and efficient computing processing. However, the traditional von Neumann architecture and silicon-based storage and computing technology will reach their limits and cannot meet the storage requirements of ultrasmall size, ultrahigh densi...

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“…The strong increase in current is associated with percolation transition in active layer i.e., with the appearance of the conductivity paths. The mechanism of the resistive switching is most likely related to the formation of localized states at the FG/PVA interface, in turn leading to the formation of new flow paths for the electric current [30]. Thus, on the one hand, PVA takes part in the formation of surface states, as it increases the ON/OFF current ratio.…”

Section: Fg Films In Two-layer Memristor Structuresmentioning

confidence: 99%

Flexibility of Fluorinated Graphene-Based Materials

et al. 2020

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The resistivity of different films and structures containing fluorinated graphene (FG) flakes and chemical vapor deposition (CVD)-grown graphene of various fluorination degrees under tensile and compressive strains due to bending deformations was studied. Graphene and multilayer graphene films grown by means of the chemical vapor deposition (CVD) method were transferred onto the flexible substrate by laminating and were subjected to fluorination. They demonstrated a weak fluorination degree (F/C lower 20%). Compressive strains led to a strong (one-two orders of magnitude) decrease in the resistivity in both cases, which was most likely connected with the formation of additional conductive paths through fluorinated graphene. Tensile strain up to 3% caused by the bending of both types of CVD-grown FG led to a constant value of the resistivity or to an irreversible increase in the resistivity under repeated strain cycles. FG films created from the suspension of the fluorinated graphene with a fluorination degree of 20–25%, after the exclusion of design details of the used structures, demonstrated a stable resistivity at least up to 2–3% of tensile and compressive strain. The scale of resistance changes ΔR/R0 was found to be in the range of 14–28% with a different sign at the 10% tensile strain (bending radius 1 mm). In the case of the structures with the FG thin film printed on polyvinyl alcohol, a stable bipolar resistive switching was observed up to 6.5% of the tensile strain (bending radius was 2 mm). A further increase in strain (6.5–8%) leads to a decrease in ON/OFF current ratio from 5 down to 2 orders of magnitude. The current ratio decrease is connected with an increase under the tensile strain in distances between conductive agents (graphene islands and traps at the interface with polyvinyl alcohol) and thickness of fluorinated barriers within the active layer. The excellent performance of the crossbar memristor structures under tensile strain shows that the FG films and structures created from suspension are especially promising for flexible electronics.

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Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol

Cited by 17 publications

References 74 publications

Memristive FG–PVA Structures Fabricated with the Use of High Energy Xe Ion Irradiation

Memristive FG–PVA Structures Fabricated with the Use of High Energy Xe Ion Irradiation

Organic Memory and Memristors: From Mechanisms, Materials to Devices

Flexibility of Fluorinated Graphene-Based Materials

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