Resistive switching effect caused by oxygen vacancy migration in SrTiO3 ceramic

Zhong, Wen-Min; Tang, Xin-Gui; Liu, Qiu-Xiang; Jiang, Yanping; Li, Wenhua; Yue, Jing-Long

doi:10.1016/j.physb.2021.413080

Cited by 9 publications

(4 citation statements)

References 40 publications

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“…T_{0} / T \left.\right)\right)^{1 / 4} \left]\right.$$where σ 1 and T 0 are constants. If dielectric relaxation time ( τ ) satisfies the Arrhenius equation of Equation (), then the carrier transport obeys the NNH conduction [ 49 ]

\tau = \left(\tau\right)_{0} \left(\text{exp}\right)^{\frac{E_{\text{A}}}{k_{\text{B}} T}}

where τ 0 is the pre‐exponential constant, and E A is the activation energy for the relaxation mechanism. If τ can be fitted by Equation () better, then the carrier transport obeys the VRH conduction [ 47 ]

$$\tau = \left(\tau\right)_{1} / \text{exp} \left[\right.

…”

Section: Resultsmentioning

confidence: 99%

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Dielectric Properties and Carrier Transport Mechanism in Annealed HfO_x‐Based Resistive Random Access Memory Devices

Bai,

Xie,

et al. 2024

Physica Status Solidi (a)

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The diversity of the carrier transport mechanism in the resistive switching process remains a significant obstacle for the design and application of resistive random access memory (RRAM) devices. In this study, the influence of annealing on the dielectric properties of the Ti/HfOx/Pt RRAM device and its associated carrier transport mechanism is investigated. The results reveal that the current conduction in both annealed and unannealed devices is primarily attributed to grain boundary (GB) relaxation, with only the GB acting as a depletion layer that induces dielectric relaxation. Furthermore, annealing decreases the interfacial polarization and changes the relaxation time at the GB. In addition, the charge carriers exhibit nearest‐neighbor hopping conduction at a higher temperature in Ti/HfOx/Pt RRAM devices, whereas variable‐range‐hopping conduction occurs at lower temperatures. Long‐range charge carrier transport also plays a significant role in the conduction process. To offer a deeper understanding of the conduction processes in the Ti/HfOx/Pt RRAM device, a carrier transport model is proposed, which provides valuable insights into the intricate mechanisms governing conduction in these devices.

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\tau = \left(\tau\right)_{0} \left(\text{exp}\right)^{\frac{E_{\text{A}}}{k_{\text{B}} T}}

$$\tau = \left(\tau\right)_{1} / \text{exp} \left[\right.

…”

Section: Resultsmentioning

confidence: 99%

“…where σ 1 and T 0 are constants. If dielectric relaxation time (τ) satisfies the Arrhenius equation of Equation ( 12), then the carrier transport obeys the NNH conduction [49] τ ¼ τ 0 exp…”

Section: Carrier Transport Mechanism Of Ti/hfo X /Pt Rram Devicesmentioning

confidence: 99%

Dielectric Properties and Carrier Transport Mechanism in Annealed HfO_x‐Based Resistive Random Access Memory Devices

Bai,

Xie,

et al. 2024

Physica Status Solidi (a)

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“…Since oxygen vacancies play a crucial role in numerous features of perovskite materials, the effects of oxygen vacancies on various physical properties such as atomic structure, electrical properties, and diffusion characteristics have been extensively investigated [42][43][44][45]. Through the use of atomic-resolution transmission electron microscopy and density functional calculations, Jin et al investigated the impact of oxygen vacancies on the atomic configuration of perovskite cobaltite films [42].…”

Section: Introductionmentioning

confidence: 99%

“…Regarding the diffusion phenomena in perovskite oxides, De Souza comprehensively summarized the theoretical background of various forms of ion transport as well as experimental approaches to obtain diffusion coefficients [44]. In addition, Zhong et al reported that the migration of oxygen vacancies in STO leads to a current-voltage characteristics curve such as the resistive switching effect at high temperatures [45]. However, despite this noticeable progress, to the best of the author's knowledge, there has been no research focusing on the effect of oxygen vacancies in perovskite materials on Zn(II) ion diffusion.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Oxygen Vacancies on the Diffusion Characteristics of Zn(II) Ions in the Perovskite SrTiO3 Layer: A Computational Study

Ahn

2023

Materials

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A highly polar perovskite SrTiO3 (STO) layer is considered as one of the promising artificial protective layers for the Zn metal anode of aqueous zinc-ion batteries (AZIBs). Although it has been reported that oxygen vacancies tend to promote Zn(II) ion migration in the STO layer and thereby effectively suppress Zn dendrite growth, there is still a lack of a basic understanding of the quantitative effects of oxygen vacancies on the diffusion characteristics of Zn(II) ions. In this regard, we comprehensively studied the structural features of charge imbalances caused by oxygen vacancies and how these charge imbalances affect the diffusion dynamics of Zn(II) ions by utilizing density functional theory and molecular dynamics simulations. It was found that the charge imbalances are typically localized close to vacancy sites and those Ti atoms that are closest to them, whereas differential charge densities close to Sr atoms are essentially non-existent. We also demonstrated that there is virtually no difference in structural stability between the different locations of oxygen vacancies by analyzing the electronic total energies of STO crystals with the different vacancy locations. As a result, although the structural aspects of charge distribution strongly rely on the relative vacancy locations within the STO crystal, Zn(II) diffusion characteristics stay almost consistent with changing vacancy locations. No preference for vacancy locations causes isotropic Zn(II) ion transport inside the STO layer, which subsequently inhibits the formation of Zn dendrites. Due to the promoted dynamics of Zn(II) ions induced by charge imbalance near the oxygen vacancies, the Zn(II) ion diffusivity in the STO layer monotonously increases with the increasing vacancy concentration ranging from 0% to 16%. However, the growth rate of Zn(II) ion diffusivity tends to slow down at relatively high vacancy concentrations as the imbalance points become saturated across the entire STO domain. The atomic-level understanding of the characteristics of Zn(II) ion diffusion demonstrated in this study is expected to contribute to developing new long-life anode systems for AZIBs.

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Structural and electrical properties of ZnO–V2O5–TiO2–Co2O3–MnO varistor ceramics with low sintering temperature

Guo²,

Xie³

et al. 2023

J Mater Sci: Mater Electron

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Resistive switching effect caused by oxygen vacancy migration in SrTiO3 ceramic

Cited by 9 publications

References 40 publications

Dielectric Properties and Carrier Transport Mechanism in Annealed HfO_x‐Based Resistive Random Access Memory Devices

Dielectric Properties and Carrier Transport Mechanism in Annealed HfO_x‐Based Resistive Random Access Memory Devices

The Effect of Oxygen Vacancies on the Diffusion Characteristics of Zn(II) Ions in the Perovskite SrTiO3 Layer: A Computational Study

Structural and electrical properties of ZnO–V2O5–TiO2–Co2O3–MnO varistor ceramics with low sintering temperature

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Resistive switching effect caused by oxygen vacancy migration in SrTiO3 ceramic

Cited by 9 publications

References 40 publications

Dielectric Properties and Carrier Transport Mechanism in Annealed HfOx‐Based Resistive Random Access Memory Devices

Dielectric Properties and Carrier Transport Mechanism in Annealed HfOx‐Based Resistive Random Access Memory Devices

The Effect of Oxygen Vacancies on the Diffusion Characteristics of Zn(II) Ions in the Perovskite SrTiO3 Layer: A Computational Study

Structural and electrical properties of ZnO–V2O5–TiO2–Co2O3–MnO varistor ceramics with low sintering temperature

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Dielectric Properties and Carrier Transport Mechanism in Annealed HfO_x‐Based Resistive Random Access Memory Devices

Dielectric Properties and Carrier Transport Mechanism in Annealed HfO_x‐Based Resistive Random Access Memory Devices