Resistive switching device based on water and zinc oxide heterojunction for soft memory applications

Hassan, Gul; Bae, Jinho; Khan, Muhammad Umair; Ali, Shawkat

doi:10.1016/j.mseb.2019.05.021

Cited by 23 publications

(30 citation statements)

References 19 publications

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“…Note that the in the TMOs play an important role in the resistive switching behavior and mimicking synapse operation. − Migration of has been proposed to play an important role in the bipolar resistive switching behaviors because can directly determine the local conductivity in many memristive systems. However, the distribution is nonuniform at the oxide/electrode interface and resistive switching can be somewhat triggered by the reaction of water (H 2 O) molecules to on the surface and below the surface. − From the XPS analysis, two different hydroxides (532.1–533.5 eV), species for interacting H 2 O molecules (533.5 eV), , and surface species physisorbed (532.7 eV) on NiO x can be clearly distinguished . However, the O IV peak (532.4 eV, pink) is only observed for case (i).…”

Section: Resultsmentioning

confidence: 99%

Multiple Switching Modes of NiO_x Memristors for Memory-Driven Multifunctional Device Applications

Park

Cho

2022

ACS Appl. Electron. Mater.

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Multiple building components with a variety of switching capabilities are required to implement memory-driven parallel computing architecture and multifunctional device applications. In this regard, there is a high demand for implementing multiple switching modes based on only one active material in a simple device form. In this study, we demonstrated the ability of a solution-processable two-terminal Ag (or Al)/NiO x /ITO memristor that exhibits triple-switching characteristics depending on the different voltage regimes. Notably, the device exhibits an analog bipolar switching behavior under a low programming voltage (≤1.0 V), enabling essential synaptic functions, as well as a high recognition accuracy of 87.42% in a single-layer neural network. After the electroforming process to form the oxygen vacancy-based conductive filament in the NiO x layer, the device concurrently exhibited digital bipolar switching and unipolar threshold switching behaviors at different voltage regimes without compliance current. These three switching characteristics are related to the transition of dominant switching mechanisms depending on the operating scheme, which is investigated using various material and chemical characterization techniques during switching, including cross-sectional scanning transmission electron microscopy, atomic force microscopy, ultraviolet photoelectron spectroscopy, and X-ray photoelectron spectroscopy.

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Section: Resultsmentioning

confidence: 99%

Multiple Switching Modes of NiO_x Memristors for Memory-Driven Multifunctional Device Applications

Park

Cho

2022

ACS Appl. Electron. Mater.

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“…For stable cone jet, appropriate voltage and flow rate are required, which result in uniform spray. The tangential electric field acting on the surface of the ink cone a thin jet emanates at the cone apex which further breaks up into a number of small droplets under the effect of coulomb forces [29][30][31]. In the stable cone jet mode, EHD is ideal for printing and can be used for thin films or pattern deposition on various substrates.…”

Section: Electrohydrodynamic (Ehd) Printingmentioning

confidence: 99%

Smart Manufacturing Technologies for Printed Electronics

Khan¹,

Ali²,

Bermak³

2020

Hybrid Nanomaterials - Flexible Electronics Materials

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Fabrication of electronic devices on different flexible substrates is an area of significant interest due to low cost, ease of fabrication, and manufacturing at ambient conditions over large areas. Over the time, a number of printing technologies have been developed to fabricate a wide range of electronic devices on nonconventional substrates according to the targeted applications. As an increasing interest of electronic industry in printed electronics, further expansion of printed technologies is expected in near future to meet the challenges of the field in terms of scalability, yield, and diversity and biocompatibility. This chapter presents a comprehensive review of various printing electronic technologies commonly used in the fabrication of electronic devices, circuits, and systems. The different printing techniques based on contact/noncontact approach of the printing tools with the target substrates have been explored. These techniques are assessed on the basis of ease of operation, printing resolutions, processability of materials, and ease of optimization of printed structures. The various technical challenges in printing techniques, their solutions with possible alternatives, and the potential research directions are highlighted. The latest developments in assembling various printing tools for enabling high speed and batch manufacturing through roll-to-roll systems are also explored.

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“…In 2008, a memristor was for the first time released by St. Williams in the HP lab . After this, new materials were introduced for memristor fabrication and optimization, including biomaterials, soft materials, 2D materials, and metal oxides. − Different device structures are proposed to fabricate memristors on a larger scale in a crossbar array, including an active layer based on a single material , and a composite or heterojunction of two materials . However, the crossbar array faces a sneak current problem .…”

Section: Introductionmentioning

confidence: 99%

Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

Khan

Saqib

Kim

et al. 2022

ACS Appl. Electron. Mater.

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The asymmetric resistive memory device can be more suitable to reduce the crosstalk effect in a crossbar array. Similarly, this work focused on the material and design concept to achieve a one-directional engineered resistive switching memory device to reduce crosstalk effect for electronic synapses. The pulsed modulated DC sputtered crystalline GaN heterojunction with ITO/ZnO Schottky diode, resulting in one-directional digital resistive switching. The DC sputtered polycrystalline GaN is used on top of the ITO/ZnO Schottky barrier to achieve asymmetric multistate resistive switching behavior. The synaptic operation helps to investigate the stable synaptic spike-rate-dependent plasticity (SRDP), spike-timing-dependent plasticity (STDP), and long-term potentiation/depression (LTP/LTD). The weight change of the device was evaluated by the Modified National Institute of Standards and Technology (MNIST) image recognition technique at the system-level neural network. The simulation part deepens the concept that an asymmetric neuromorphic device can help reduce the crosstalk effect in a crossbar array to implement AI inference applications.

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Resistive switching device based on water and zinc oxide heterojunction for soft memory applications

Cited by 23 publications

References 19 publications

Multiple Switching Modes of NiO_x Memristors for Memory-Driven Multifunctional Device Applications

Multiple Switching Modes of NiO_x Memristors for Memory-Driven Multifunctional Device Applications

Smart Manufacturing Technologies for Printed Electronics

Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

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Resistive switching device based on water and zinc oxide heterojunction for soft memory applications

Cited by 23 publications

References 19 publications

Multiple Switching Modes of NiOx Memristors for Memory-Driven Multifunctional Device Applications

Multiple Switching Modes of NiOx Memristors for Memory-Driven Multifunctional Device Applications

Smart Manufacturing Technologies for Printed Electronics

Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

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Product

Resources

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Multiple Switching Modes of NiO_x Memristors for Memory-Driven Multifunctional Device Applications

Multiple Switching Modes of NiO_x Memristors for Memory-Driven Multifunctional Device Applications