Resistive switching characteristics of methyl-ammonium lead iodide perovskite during atmosphere degradation

Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures

“…This suggests that both perfluoroarene systems enhance durability, whereas F-BNAI-treated devices are more reliable, even after 40 days of ambient air exposure. The reduction of the ON/OFF ratio can be ascribed to the humidity-induced degradation, 74 which can be suppressed by using the hydrophobic materials at the interface, contributing to the enhancement of the overall stability. The ambient stability results agree with the wetting properties of the perovskite films with and without perfluoroarene treatment, highlighting the potential of perfluoroarenes to sustain device operation under ambient conditions.…”