Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices

Abstract

Charge-based memories, such as NAND flash and dynamic random-access memory (DRAM), have reached scaling limits and various next-generation memories are being studied to overcome their issues. Resistive random-access memory (RRAM) has advantages in structural scalability and long retention characteristics, and thus has been studied as a next-generation memory application and neuromorphic system area. In this paper, AlSiOx, which was used as an alloyed insulator, was used to secure stable switching. We demonstrate synaptic characteristics, as well as the basic resistive switching characteristics with multi-level cells (MLC) by applying the DC sweep and pulses. Conduction mechanism analysis for resistive switching characteristics was conducted to understand the resistive switching properties of the device. MLC, retention, and endurance are evaluated and potentiation/depression curves are mimicked for a neuromorphic device.

Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications

“…Kim et al [ 36 ] examined the RS characteristics in an alloy memory system based on HfTiO x . Lee et al [ 37 ] demonstrated fundamental RS properties and achieved multilevel switching behavior by applying the DC sweep and pulses. Wang et al [ 38 ] obtained analog switching behavior and synaptic function by interface-engineering in HfO 2 -based RRAM through O 3 pulse treatment.…”