Resistive switching characteristics in Pr0.7Ca0.3MnO3 thin films on LaNiO3-electrodized Si substrate

Abstract

The resistive switching characteristics of Pr0.7Ca0.3MnO3 (PCMO) thin films deposited on LaNiO3 (LNO)-electrodized Si substrate were investigated. Highly (100)-textured PCMO films were grown on the (100)-oriented LNO electrode. They exhibited reversible and steady bistable resistance switching behavior. The resistive switching behavior of PCMO capacitors on LNO is related to the trap-controlled space charge limited current mechanism and LNO/PCMO/LNO capacitor exhibits the strongest resistive switching effect with a resistance ratio for about two orders of magnitude.

Crystal micromorphologies and forming voltage effect on resistance switching behaviors in Ti/Pr(Sr0.1Ca0.9)2Mn2O7/Pt devices

“…Finally, the current sharply rises with a gradient of 4.14, which is close to 4.0. In the LRS, the IeV curve shows Ohmic behavior under low voltage (<0.1 V), and then the slope increases to 1.75, which indicates that the main conduction mechanism in the positive voltage region is SCLC [10]. When a positive voltage is applied to the Ti top electrode, the Ti top electrode is considered to behave as the oxygen reservoir, and oxygen ions are extracted from PSCMO film [19].…”

“…[7], which shows a resistive switching (RS) phenomenon. Numerous perovskite oxide based devices, such as La 0.79 Sr 0.21 MnO 3 [8], La 0.7 Ca 0.3 MnO 3 [9] and Pr 0.7 Ca 0.3 MnO 3 (PCMO) [10], have been extensively studied, and often show bipolar switching behaviors. The insulation layer with a thickness of a few nanometers between the perovskite oxide film and metal electrode can cause the obvious change of RS, such as the insertion of Sm 0.7 Ca 0.3 MnO 3 layers induces rectification behavior with hysteresis in the IeV curves of Ti/Sm 0.7 Ca 0.3 MnO 3 / La 0.7 Sr 0.3 MnO 3 /SrRuO 3 device [11].…”

Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

“…The power-law model is often ascribed to space charge limited conduction (SCLC), to electron transport in a network of conductors, and to inelastic quantum tunneling [1,[19][20][21][22]. More specifically, a and b have been linked to the percolation theory of nonlinear conductor networks with a distribution of percolation thresholds.…”

Opposite resistive switching characteristics for (Ba0.6Sr0.4)TiO3 thin films on Ir and Pt bottom electrode

“…For scalability reasons, resistive information storage concepts have the higher potential compared to charge based storage concepts [6]. Recently, dielectric perovskite type oxides such as (La,Sr)MnO 3 , (Pr,Ca)MnO 3 have aroused increasing attention as the candidates for resistive memory applications, but little attention has been paid on (Ba,Sr)TiO 3 [7,8].…”