Resistive Switching Characteristics in MnO Nanoparticle Assembly and Ag<sub>2</sub>Se Thin Film Devices

Hu, Quanli; Lee, Tae Sung; Lee, Nam Joo; Kang, Tae Su; Park, Mi Ra; Yoon, Tae‐Sik; Lee, Hyun Ho; Kang, Chi Jung

doi:10.1166/jnn.2017.14732

Cited by 7 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With the photodoping operation of Ag ions into the RS layer, the RRAM device with the Ag-As 2 S 3 layer operated under low voltage, and CF based on the Ag element was observed by an optical microscope. After that, some solid electrolyte materials have been presented including Ag 2 Se [24], Ge 2 Sb 2 Te 5 [25], GeTe [124], etc. At present, a series of 2D materials such as graphene [89,125,126], molybdenum disulphide (MoS 2 ) [26,127,128] and perovskite materials (CH 3 NH 3 SnCl 3 and CsPbBr 3 ) [73,90] also inspired researchers' interest due to their small size, ultra-thin thickness and excellent physical properties, which have resulted in superior performance of RRAM devices.…”

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

“…Currently, 2D thin film materials such as graphene and graphene oxide (GO) are also attracting increasing attention as candidates of electrode because of the excellent mobility of carriers and high thermal/electrical conductivity [ 15 , 16 , 17 ]. Compared with electrode thin film materials, more researchers focus on thin film materials applicated on RS medium, and inorganic materials are the main investigation objectives, including oxides and solid electrolyte, which will be discussed in Chapter 3 [ 11 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

View full text Add to dashboard Cite

Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

show abstract

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

View full text Add to dashboard Cite

show abstract

“…The equilibrium band diagram for Ag/Se/Ag 2 Se is shown in figure S8. The work function of the Ag is about 4.62 eV [29]. The n-type Ag 2 Se has a high electron affinity due to the high electronegativity of Se (χ = 2.55 eV), its electron affinity can be approximated as 2.02 eV [30].…”

Section: Performance Of Ag 2 Se/swcnts Hybrid Filmmentioning

confidence: 99%

High power factor n-type Ag₂Se/SWCNTs hybrid film for flexible thermoelectric generator

Geng¹,

Wu²,

Hou³

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Flexible thermoelectric (TE) devices can generate electricity by harvesting low-grade heat from curved surfaces, which has great potential in the energy supply of flexible electronic and wearable sensing. Extensive research has focused on flexible TE materials based on conductive polymers due to their lightweight, but it is a huge challenge to obtain high performance and regulate conductivity type comparable to inorganic TE materials. Here, we report n-type Ag 2 Se/single-walled carbon nanotubes hybrid film with a high power factor ∼1030.7 µW m −1 K −2 and excellent flexibility at room temperature. Excellent mechanical and TE properties can be attributed to its network and nano-bridge structure. A TE prototype composed of six leg generates a voltage and a maximum output power of 24.8 mV and 725 nW respectively at a temperature gradient of 30 K. Our results provide insight into the design and fabrication of high-performance flexible hybrid films.

show abstract

“…Many studies of charge transport within solution-processed semiconductors such as colloidal CdSe quantum dots and PbS photovoltaic nanoparticles exist; , however, few studies demonstrate resistive switching between nanoparticles, where the ligand interparticle interface profoundly affects the response. , Studies of the memristive character of individual, sol–gel-produced TiO 2 nanoparticles revealed both complementary and bipolar switching characters that exhibited high sensitivity to annealing and partial redox processes involving the substoichiometric core . Ag/Ag 2 Se nanoparticle film/Au and Ag/Ag 2 Se NP/MnO NP/Au bilayer devices exhibited low power consumption, high retention, and high endurance properties that were retained upon the application of ±0.4% stress states. Most studies of resistive switching within colloidal systems observe the electrical characteristics of spin-coated films comprising binary oxide or perovskite complex oxide nanoparticles, dip-coated thin films, − or compact pellets .…”

Section: Introductionmentioning

confidence: 99%

How Ligands Affect Resistive Switching in Solution-Processed HfO₂ Nanoparticle Assemblies

Wang

Choudhary

Roo

et al. 2018

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance. Although thin-film oxide materials have been extensively studied, the switching properties of nanoparticle assemblies remain underexplored due to difficulties in fabricating ordered structures. Here, we employ a simple flow coating method for the facile deposition of highly ordered HfO nanoparticle nanoribbon assemblies. The resistive switching character of nanoribbons was determined to correlate directly with the organic capping layer length of their constituting HfO nanoparticles, using oleic acid, dodecanoic acid, and undecenoic acid as model nanoparticle ligands. Through a systematic comparison of the forming process, operating set/reset voltages, and resistance states, we demonstrate a tunable resistive switching response by varying the ligand type, thus providing a base correlation for solution-processed ReRAM device fabrication.

show abstract

Resistive Switching Characteristics in MnO Nanoparticle Assembly and Ag₂Se Thin Film Devices

Cited by 7 publications

References 0 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

High power factor n-type Ag₂Se/SWCNTs hybrid film for flexible thermoelectric generator

How Ligands Affect Resistive Switching in Solution-Processed HfO₂ Nanoparticle Assemblies

Contact Info

Product

Resources

About

Resistive Switching Characteristics in MnO Nanoparticle Assembly and Ag2Se Thin Film Devices

Cited by 7 publications

References 0 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

High power factor n-type Ag2Se/SWCNTs hybrid film for flexible thermoelectric generator

How Ligands Affect Resistive Switching in Solution-Processed HfO2 Nanoparticle Assemblies

Contact Info

Product

Resources

About

Resistive Switching Characteristics in MnO Nanoparticle Assembly and Ag₂Se Thin Film Devices

High power factor n-type Ag₂Se/SWCNTs hybrid film for flexible thermoelectric generator

How Ligands Affect Resistive Switching in Solution-Processed HfO₂ Nanoparticle Assemblies