Resistive switching behavior and mechanism in flexible TiO2@Cf memristor crossbars

Hu, Shineng; Yue, Jianling; Jiang, Chao; Tang, Xincun; Huang, Xiaozhong; Du, Zuojuan; Wang, Chunqi

doi:10.1016/j.ceramint.2019.02.068

Cited by 15 publications

(18 citation statements)

References 36 publications

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“…The fabrication process of TiO 2 @CF/PDMS composites can be described as follows: Firstly, pretreatment was conducted on the pristine CF by washing in ethyl alcohol and deionized water for a certain amount of time to reduce the effect of polymer organics and trace impurities deposited on its surface. Subsequently, the TiO 2 nanowires were prepared onto the CF to obtain TiO 2 @CF via hydrothermal technique, where source materials of 100 mL deionized water, 25 mL hydrochloric acid, and 1.7 mL titanium butoxide were taken to perform the fabrication process under the conditions of relatively low temperature of 150 ℃ with 3 h. For the detailed fabrication process of TiO 2 nanowires, this can www.springer.com/journal/40145 be referred to our previous research work [23]. After this, PDMS was used to immerse the TiO 2 @CF to achieve the final TiO 2 @CF/PDMS composites.…”

Section: Fabricationmentioning

confidence: 99%

Significant strain-rate dependence of sensing behavior in TiO2@carbon fibre/PDMS composites for flexible strain sensors

Zhang

et al. 2021

J Adv Ceram

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Carbon fibre (CF) embedded into elastomeric media has been attracting incredible interest as flexible strain sensors in the application of skin electronics owing to their high sensitivity in a very small strain gauge. To further improve the sensitivity of CF/PDMS composite strain sensor, the relatively low temperature prepared TiO2 nanowire via hydrothermal route was employed herein to functionalize CF. The results showed a significant increase in the sensitivity of the TiO2@CF/PDMS composite strain sensors which was reflected by the calculated gauge factor. As the prepared TiO2 nanowire vertically embraced the surroundings of the CF, the introduced TiO2 nanowire contributed to a highly porous structure which played a predominant role in improving the sensitivity of strain sensors. Moreover, the significant strain rate dependent behavior of TiO2@CF/PDMS strain sensor was revealed when performing monotonic tests at varied strain rate. Therefore, introducing TiO2 nanowire on CF offers a new technique for fabricating flexible strain sensors with improved sensitivity for the application of flexible electronics.

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Section: Fabricationmentioning

confidence: 99%

Significant strain-rate dependence of sensing behavior in TiO2@carbon fibre/PDMS composites for flexible strain sensors

Zhang

et al. 2021

J Adv Ceram

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“…During the 0 V to -1.5 V region, the plot of ln(I) vs. √ is reasonably well fitted to a straight line with slope of 2.61, which means the process can be attributed to Schottky Emission. According previous researches [27,46], the BST@Cf is equivalent to two head-to-head Schottky diodes. The two diodes operate in opposite regime: the diode connected with the anodic is forward biased while the diode connected with the cathode electrode is reversely biased.…”

Section: Interpretation Theory Of Resistance Transition Processmentioning

confidence: 99%

“…9(d)). (Electron affinity of BST (ХBST) and work function of carbon fiber (Wcf) can be referred to the previous work of Scott [49] and Hu [27], respectively.)…”

Section: Interpretation Theory Of Resistance Transition Processmentioning

confidence: 99%

“…However, to date, few studies have focused on carbon fiber based flexible memristors [26]. Our group previously reported a flexible TiO2@Cf memristor based on carbon fiber, prepared via a hydrothermal method [27], which shows excellent memristor characteristics. While that work provided a simple path to fabricate flexible wearable memristors, the mechanical properties of carbon fibers are reduced due to the treatment at high temperature and pressure during the hydrothermal reaction.…”

Section: Introductionmentioning

confidence: 99%

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Vacancy-induced resistive switching and synaptic behavior in flexible BST@Cf memristor crossbars

Wang

Yue

Jiang

et al. 2020

Ceramics International

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In this study, carbon fibers (Cf) coated with Ba0.6Sr0.4TiO3 (BST) (BST@Cf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical 2 properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 10 6 . The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F-N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule.The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future.

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“…For the past few years, studies on memristor were focused on both the memristor fabrications [7] - [9] and the development of memristor model to predict the device performance at the circuit level in various applications [10] - [17]. In memristor modeling, the conduction mechanism and the dynamical phenomenon of state variable will be considered [2].…”

Section: Introductionmentioning

confidence: 99%

State Dynamic Modeling using Ionic Conduction Phenomenon for TiO2-based Memristive Thin Film

Bakar*,

Kamarozaman,

Abdullah

et al. 2019

IJRTE

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In this work a SPICE model was developed for metal-insulator-metal (MIM)-based memristors. The proposed model was achieved by combining the current conduction mechanisms with the dynamical state variable phenomenon. To account for ionic conduction in memristor, the Mott-Gurney law for ion hopping was incorporated in the state variable derivative. As compared to the experimental data, the proposed model is well matched with the measured data. The memristance and root mean square (RMS) error were calculated to be 120 Ω and 0.02 respectively. Simulating the proposed model at frequencies greater than unity formed a smaller hysteresis loop area.

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Resistive switching behavior and mechanism in flexible TiO2@Cf memristor crossbars

Cited by 15 publications

References 36 publications

Significant strain-rate dependence of sensing behavior in TiO2@carbon fibre/PDMS composites for flexible strain sensors

Significant strain-rate dependence of sensing behavior in TiO2@carbon fibre/PDMS composites for flexible strain sensors

Vacancy-induced resistive switching and synaptic behavior in flexible BST@Cf memristor crossbars

State Dynamic Modeling using Ionic Conduction Phenomenon for TiO2-based Memristive Thin Film

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