Resistive switching artificially induced in a dielectric/ferroelectric composite diode

Abstract

Ferroelectric resistive switching was artificially induced in a conductive ferroelectric capacitor by inserting a thin dielectric layer at an electrode/ferroelectric interface. Ferroelectric capacitors consisting of semiconducting Bi-deficient Bi1−δFeO3 layers with SrRuO3 electrodes showed no resistive switching, but resistive switching emerged in these ferroelectric capacitors when a thin LaFeO3 dielectric layer was inserted at one of the SrRuO3/Bi1−δFeO3 interfaces. In addition to resistive switching, SrRuO3/LaFeO3/Bi1−δFeO3/SrRuO3 devices showed rectifying current–voltage characteristics, suggesting an asymmetric potential distribution along the stacking direction in the device. The results shed light upon the mechanism of resistive switching in ferroelectric diodes and demonstrate that interface engineering provides a simple but effective approach toward controlling the ferroelectric resistive switching characteristics.

Strong Surface‐Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions

“…The first of these effects is imperfect charge screening, as described by a finite screening length λ eff , i.e., by band bending in an electrode . The second effect is the presence of a dead layer in the ferroelectric barrier, creating an asymmetric potential distribution through formation of a depolarization field . In the Co/BTO( A )/LSMO junction (Figure a), we consider practically perfect charge screening ( λ eff ≈ 0) and a zero thickness of the dead layer at the Co/BTO( A ) interface, as predicted theoretically .…”

Effect of a semiconductor electrode on the tunneling electroresistance in ferroelectric tunneling junction

“…[8][9][10] It is generally accepted that the asymmetry of FTJs plays a key role for the orientation of a sizable TER, such as using asymmetric electrodes [11][12][13][14][15][16][17] or constructing asymmetric metal/FE interfaces. [18][19][20][21][22][23][24][25][26][27] Indeed, the sizable TER effect had been observed in several BaTiO 3 (BTO) based asymmetric FTJs experimentally. For example, Soni et al 16 observed giant TER effect in La 0:7 Sr 0:3 MnO 3 (LSMO)/BTO/Au and LSMO/BTO/Cu asymmetric FTJs owing to effective potential barrier modulation by the polarization.…”

Resonant tunneling across a ferroelectric domain wall

“…The structural and/or electronic asymmetry of the FTJ plays a decisive role for the TER effect. It can be achieved using dissimilar electrodes [9,[19][20][21][22], through interface engineering [13,[23][24][25][26], or applied bias [27,28]. Additionally, using ferromagnetic electrodes in a FTJ adds functionality, forming a multiferroic tunnel junction (MFTJ) [29].…”