Resistive switching and magnetic behavior of Bi0.8Ba0.2FeO3 / SrRuO3 / SrTiO3films: role of thickness-dependent strain

Vagadia, Megha; Ravalia, Ashish; Trivedi, Priyanka; Jethva, Sadaf; Katba, Savan; Kuberkar, D. G.

doi:10.1088/0022-3727/49/18/185302

Cited by 14 publications

(4 citation statements)

References 28 publications

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“…The results indicated that lots of OVs exist in SSO films and the concentrations of OVs increase with the decrease of the growth oxygen pressures. The same phenomena were also observed in Sn-doped In 2 O 3 and Bi 0.8 Ba 0.2 FeO 3 films. , …”

Section: Results and Discussionsupporting

confidence: 76%

“…The same phenomena were also observed in Sn-doped In 2 O 3 and Bi 0.8 Ba 0.2 FeO 3 films. 40,42 Figure 4a shows the transmittance spectra in the wavelength range of 200−2000 nm for SSO films deposited on LAO substrates at various oxygen pressures. The spectra show that all of the SSO films have an optical transmittance of more than 75% in the visible and near-infrared wavelength region, even for the film deposited at 2 × 10 −3 Pa oxygen pressures.…”

Section: Resultsmentioning

confidence: 99%

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Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO₃ Epitaxial Films

Gao

Chen

et al. 2018

ACS Appl. Mater. Interfaces

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Perovskite SrSnO (SSO) thin films were epitaxially grown on LaAlO (001) substrates by pulsed laser deposition at various oxygen pressures. X-ray diffraction was carried out to characterize the microstructure of the films, and the results showed that the unit-cell volume of the films increased gradually with lowering the growth oxygen pressures while remaining the perovskite structure. X-ray photoelectron spectroscopy results indicated that oxygen vacancies (OVs) existed in SSO thin films. Optical property measurements showed that all samples have a transmittance of more than 75% in the visible and near-infrared wavelength region. Furthermore, the band gaps of SSO films were found to increase from 4.56 to 5.21 eV with the decrease of deposition oxygen pressures calculated by linear fitting absorption edges of optical transmittance. In order to further ascertain the effect of OVs on band gaps of SSO films, the as-deposited 10 Pa film was annealed at 10 Pa oxygen pressures and the band gap was found to increase by more than 1 eV. Density functional theory was used to explain the effects of OVs on band gaps and the ferromagnetism of SSO films, and the results suggested that an impurity energy level of OVs appeared near the Fermi level, causing the widening of the band gaps, which is consistent with our experimental results. Meanwhile, the room-temperature ferromagnetism was observed in the SSO films, and saturation magnetization increased gradually from 4.46 to 7.69 emu/cm with decreasing the growth oxygen pressures.

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Section: Results and Discussionsupporting

confidence: 76%

Section: Resultsmentioning

confidence: 99%

Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO₃ Epitaxial Films

Gao

Chen

et al. 2018

ACS Appl. Mater. Interfaces

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“…Among the different materials that exhibit the RS phenomenon, intensive research is being devoted to RS phenomena in transition metal oxides [63,84,93,94,102,135,[142][143][144][145][146][147][148]. In transition metal oxides, the mobility of oxygen-related defects, typically oxygen vacancies, is much higher than that of cations [7].…”

Section: Oxidesmentioning

confidence: 99%

“…For in-memory computing purposes, the cycling endurance of memory devices is among the highest priorities. BRS devices, in which the switching process relies purely on the migration of atoms/ions along the CF only [95,135,146,147], are considered more reliable than URS devices and show better uniformity and cycling endurance. Further, mat erial engineering may play an important role in achieving a large resistance window between the LRS and HRS and thus in enlarging the read margin, which can lead to the development of scalable RRAM-based devices.…”

Section: Challengesmentioning

confidence: 99%

Advances in resistive switching based memory devices

Munjal¹,

Khare²

2019

J. Phys. D: Appl. Phys.

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Among the emerging memories, resistive switching (RS) based resistive random-access memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal structures, low power consumption, long endurance and retention characteristics, low fabrication cost, ultrafast switching, and CMOS compatibility. In recent years, several oxides, chalcogenides, polymers and their composites have been explored for RS devices. Many of these studies show a high resistance ratio of the OFF and ON states with good RS characteristics. Some of these studies also show the realization of multifunctional RS devices such as the simultaneous switching of resistance and magnetic states. In order to scale up RS-based RRAMs, a detailed understanding of the occurrence of RS is very much desirable. In this review, we provide an overview of the current understanding, recent advances and future outlook of RS-based RRAM devices along with fundamental concepts of the different types of RS, and conventional as well as novel measurement techniques which are being used to characterize RS devices. Observations of RS in different materials are presented, and RS mechanisms, such as the valence change mechanism and electrochemical metallization memory, are discussed in detail. An overview of multifunctional RS devices and the main challenges faced in scaling up RS devices is also presented.

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Evidence for negative differential resistance and switchable diode effect in multiferroic BiFe0.95Sc0.05O3-based resistive random access memory under doping engineering

Mohanty

Mishra

2022

J Mater Sci: Mater Electron

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Resistive switching and magnetic behavior of Bi_0.8Ba_0.2FeO₃ / SrRuO₃ / SrTiO₃films: role of thickness-dependent strain

Cited by 14 publications

References 28 publications

Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO₃ Epitaxial Films

Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO₃ Epitaxial Films

Advances in resistive switching based memory devices

Evidence for negative differential resistance and switchable diode effect in multiferroic BiFe0.95Sc0.05O3-based resistive random access memory under doping engineering

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Resistive switching and magnetic behavior of Bi0.8Ba0.2FeO3 / SrRuO3 / SrTiO3films: role of thickness-dependent strain

Cited by 14 publications

References 28 publications

Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO3 Epitaxial Films

Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO3 Epitaxial Films

Advances in resistive switching based memory devices

Evidence for negative differential resistance and switchable diode effect in multiferroic BiFe0.95Sc0.05O3-based resistive random access memory under doping engineering

Contact Info

Product

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Resistive switching and magnetic behavior of Bi_0.8Ba_0.2FeO₃ / SrRuO₃ / SrTiO₃films: role of thickness-dependent strain

Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO₃ Epitaxial Films

Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO₃ Epitaxial Films