Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature

Kubicek, Markus; Taibl, Stefanie; Navickas, Edvinas; Hutter, Herbert; Fafilek, G.; Fleig, Jürgen

doi:10.1007/s10832-017-0081-2

Cited by 16 publications

(25 citation statements)

References 54 publications

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“…Compositions of the perovskite oxide system Sr(Ti,Fe)O3-y are of interest as mixed ionicelectronic conductors in environmental oxygen sensing, [1] resistive switches for memories and computing [2][3][4][5][6] and solid oxide fuel cell electrodes for energy conversion. [7,8] For many of these applications, processing the material in thin film form, and at low temperatures suitable for silicon integration, is desirable.…”

Section: Introductionmentioning

confidence: 99%

In Situ Method Correlating Raman Vibrational Characteristics to Chemical Expansion via Oxygen Nonstoichiometry of Perovskite Thin Films

et al. 2019

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This article is protected by copyright. All rights reserved. track the frequency of the oxygen stretching mode around Fe 4+ , as it decreases during reduction as the material expands and increases during re-oxidation as the material shrinks. This methodology of oxygen pumping and in situ Raman of oxide films enables future in operando measurements even for small material volumes, as typical for applications of films as electrodes or electrolytes utilized in electrochemical energy conversion or memory devices.

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Section: Introductionmentioning

confidence: 99%

In Situ Method Correlating Raman Vibrational Characteristics to Chemical Expansion via Oxygen Nonstoichiometry of Perovskite Thin Films

et al. 2019

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“…For example, a correlation between conductivity and lattice constant was found for Nb:SrTiO 3 thin films [16,17]. Other studies on nominally 0.4 mol% Fe doped SrTiO 3 thin films (100 to 413 nm thickness) showed conductivities with values being orders of magnitude lower than those of the corresponding targets [18,19]. Interestingly, these conductivities were very close to those expected for hypothetical ultrapure electronically intrinsic SrTiO 3 .…”

Section: Introductionmentioning

confidence: 66%

Cation non-stoichiometry in Fe:SrTiO₃ thin films and its effect on the electrical conductivity

et al. 2021

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“…The role of metal-insulator transitions on resistive switching of perovskite oxides and potential impact on structural and chemical design rules are discussed by Gonzales-Rosillo and co-workers from the Puig group [12]. Kubicek, Taibl, Navickas, Hutter, Fafilek and Fleig investigate and review bias effects and mechanisms at high and low temperature for strontium titanate perovskites [13]. Yang and the Guo team explore how strontium titanate can be employed as resistive switch to emulate neurological and psychological functions [14].…”

Section: Emulation Of Neural Network By Redox-based Resistivementioning

confidence: 99%

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

2017

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Emulation of neural networks by redox-based ResistiveRandom Access Memories (ReRAMs) with components such as thin films of ceramic materials are considered by the technological roadmap (ITRS) as a promising concept for the next generation non-volatile memory storage and as an important key towards computation with neuromorphic algorithms. ReRAMs are regarded as conceptually new building units in modern nanoelectronics, finding application not only as a memory, but also as selectors, for logic operations and neuromorphic computing circuits beyond the von Neumann concept, being capable of bio-inspired cognitive functions, such as machine learning and pattern recognition. The information is saved in ReRAMs as particular resistances of the devices adjustable by voltage stimuli, where in the most simple case the high resistive state represents the Boolean 0 and the low resistive state -the Boolean 1. The devices show outstanding potential for scaling down to the atomic level, integration, low-power consumption, sub-nanosecond operation time range and digital and/or analog volatile and/or non-volatile information storage. In these devices, the switching relies on redox reactions and mixed ionic-electronic transport at the nanoscale, in cells/devices of the type MEM (metal-electrolytemetal) or MIM (metal-insulator-metal) where oxides and higher chalcogenides are typically used as ion conducting materials. ReRAM devices are operated at extremely harsh conditions characterized by high electric fields (up to1 0 8 V/m) and extremely high current densities in the range above MA/cm 2 and show perspective for future memory and neuromorphic computing devices.In this special issue of the Journal of Electroceramics, we present a selection of invited and contributed articles, which focus on both materials and device aspects. These papers span a wide range reviewing and proposing materials for the switching oxides, including investigation of the switching mechanism, highlighting the involved nanionic processes and highlighting novel operation principles. We are fortunate to have attracted 16 high quality and timely contributions to this issue composed of invited reviews highlighting either material, probing or device aspects on the theme of this special issue.An invited review on resistive switching devices and their applications as mixed signal analog-digital neuromorphic computing architectures and other application fields by Zidan, Chen, Indiveri and Lu leads off the special issue [1]. In this paper, the development and opportunities of memristive switching devices for replacing classic binary transistors and potential computing architectures are discussed by the authors. Resistive switches offer the intrinsic ability of ready processing in 3D memory array architectures with exciting potential for mass storage applications and handling of big data. In a joint contribution lead by Chen et al. colleagues from Stanford,

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Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature

Cited by 16 publications

References 54 publications

In Situ Method Correlating Raman Vibrational Characteristics to Chemical Expansion via Oxygen Nonstoichiometry of Perovskite Thin Films

In Situ Method Correlating Raman Vibrational Characteristics to Chemical Expansion via Oxygen Nonstoichiometry of Perovskite Thin Films

Cation non-stoichiometry in Fe:SrTiO₃ thin films and its effect on the electrical conductivity

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

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Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature

Cited by 16 publications

References 54 publications

In Situ Method Correlating Raman Vibrational Characteristics to Chemical Expansion via Oxygen Nonstoichiometry of Perovskite Thin Films

In Situ Method Correlating Raman Vibrational Characteristics to Chemical Expansion via Oxygen Nonstoichiometry of Perovskite Thin Films

Cation non-stoichiometry in Fe:SrTiO3 thin films and its effect on the electrical conductivity

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

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Cation non-stoichiometry in Fe:SrTiO₃ thin films and its effect on the electrical conductivity