Resistive Random Access Memory (ReRAM) Based on Metal Oxides

Akinaga, H.; Shima, Hisashi

doi:10.1109/jproc.2010.2070830

Cited by 937 publications

(485 citation statements)

References 75 publications

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“…The underlying mechanism is the influence of the magnetic field on electron occupation of the conduction band, which depends on the materials used in magnetic granular system, concentration of magnetic granules in the insulating matrix, applied voltage, and the charge accumulation on the granules. We support our theoretical calculations by measuring the magnetic field dependence of resistive switching behaviour in Co/Al 2 Resistive switching (RS) is a dramatic change in resistance of various metal-insulator systems induced by the electric field. Threshold RS is a switching between high resistance states (HRS) and low resistance states (LRS) when only one stable resistance state is preferable with no applied voltage.…”

supporting

confidence: 71%

“…For instance, the resistive random access memory (ReRAM), based on RS effect, is a potential candidate for the next generation of memory devices. 1,2 Features such as high scalability, high speed, and low power operation give an advantage over the flash memory technology, prone to endurance issues and low speed. Structural simplicity and higher ON/OFF ratio also gives ReRAM an edge over other promising technologies like phase change RAM and spin transfer torque RAM.…”

mentioning

confidence: 99%

“…Binary oxides like TiO 2 , NiO, ZnO, CuO, TaO 2 , HfO 2 , etc. 2,3 have been a popular choice for RS studies. Incorporation of magnetic components in a RS system provides an additional degree of freedom and may allow controlling the switching voltage with the external magnetic fields.…”

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confidence: 99%

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Magnetic field control of hysteretic switching in Co/Al2O3 multilayers by carrier injection

et al. 2011

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We propose a theoretical model of magnetic field dependence of hysteretic switching in magnetic granular system. The model is based on the self-trapped electrons mechanism. Our calculations show that the switching voltage may be significantly decreased with increasing the magnetic field. The underlying mechanism is the influence of the magnetic field on electron occupation of the conduction band, which depends on the materials used in magnetic granular system, concentration of magnetic granules in the insulating matrix, applied voltage, and the charge accumulation on the granules. We support our theoretical calculations by measuring the magnetic field dependence of resistive switching behaviour in Co/Al2O3 granular multilayers. Our experimental results are in qualitative agreement with the proposed theory

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confidence: 99%

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Magnetic field control of hysteretic switching in Co/Al2O3 multilayers by carrier injection

et al. 2011

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“…We developed an electron tunneling model to elucidate the conduction process which showed that the 1/f α behavior was due to the distribution of relaxation times of electron tunneling between the electrodes and the traps in the conducting filaments. The transition of the slope index α from 1 to 2 at a certain cutoff frequency indicates that there is a tunneling gap formed between electrodes and the residual of the conductive filaments in the high resistance state.Keywords -low frequency noise, resistive switching (RRAM), transition metal oxide, electron tunneling Currently, transition metal oxide based resistive switching memory is extensively studied as one of the most competitive candidates for future non-volatile memory applications due to its simple structure, fast switching speed, great scalability, and compatibility with silicon complementary metal-oxidesemiconductor (CMOS) technology [9][10][11]. The mechanism of resistive switching phenomenon in oxides is usually attributed to the formation/rupture of conductive filaments (CFs) which may consist of oxygen vacancies or metal precipitates [12].…”

mentioning

confidence: 99%

“…Keywords -low frequency noise, resistive switching (RRAM), transition metal oxide, electron tunneling Currently, transition metal oxide based resistive switching memory is extensively studied as one of the most competitive candidates for future non-volatile memory applications due to its simple structure, fast switching speed, great scalability, and compatibility with silicon complementary metal-oxidesemiconductor (CMOS) technology [9][10][11]. The mechanism of resistive switching phenomenon in oxides is usually attributed to the formation/rupture of conductive filaments (CFs) which may consist of oxygen vacancies or metal precipitates [12].…”

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Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2

Jeyasingh

et al. 2012

Phys. Rev. B

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-Low frequency noise measurements were performed on HfO 2 based bipolar resistive switching memory devices. A 1/f α DC noise power spectral density was observed with α~1 for low resistance state and α~2 for high resistance state. We developed an electron tunneling model to elucidate the conduction process which showed that the 1/f α behavior was due to the distribution of relaxation times of electron tunneling between the electrodes and the traps in the conducting filaments. The transition of the slope index α from 1 to 2 at a certain cutoff frequency indicates that there is a tunneling gap formed between electrodes and the residual of the conductive filaments in the high resistance state.Keywords -low frequency noise, resistive switching (RRAM), transition metal oxide, electron tunneling Currently, transition metal oxide based resistive switching memory is extensively studied as one of the most competitive candidates for future non-volatile memory applications due to its simple structure, fast switching speed, great scalability, and compatibility with silicon complementary metal-oxidesemiconductor (CMOS) technology [9][10][11]. The mechanism of resistive switching phenomenon in oxides is usually attributed to the formation/rupture of conductive filaments (CFs) which may consist of oxygen vacancies or metal precipitates [12]. The set process from high resistance state (HRS) to low resistance state (LRS) is interpreted as a dielectric soft breakdown associated with the migration of oxygen ions toward the anode, leaving behind the oxygen vacancies in the bulk oxide to form CFs connecting both electrodes [13]. To reset from LRS to HRS, there are two modes: in the unipolar reset (the reset occurs at the same polarity as the set), Joule-heating-assisted diffusion of oxygen ions from anode and surrounding oxides rupture the CFs by recombination with oxygen vacancies or re-oxidization of the metal precipitates [14]. In the bipolar reset (the reset occurs at the opposite polarity as the set), electric-field-assisted drift of oxygen ions from the oxygen reservoir rupture the CFs [15]. In the bipolar switching mode, oxidizable electrode materials such as Ti, TiN, TaN are usually used to serve as the oxygen reservoir providing the oxygen ions during the reset process [16]. The device used in this paper exhibits the bipolar switching mode. Although such a phenomenological physical switching picture above has been proposed, the detailed characterization and quantitative theoretical analysis of the conduction mechanism is still lacking in the literature.Low frequency noise (LFN) measurement is a technique that can electrically characterize the trapassisted conduction process in dielectrics [17][18][19] NiO [22] (in this paper f refers to the frequency). In this work, we perform LFN measurement on HfO 2 based resistive switching memory to investigate its conduction and switching mechanism. HfO 2 is chosen because HfO 2 based devices exhibit desirable properties such as ultra-fast switching speed (

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Emerging Memory Structures for VLSI Circuits

Garzón¹,

Yavits²,

Lanuzza³

et al. 2022

Wiley Encyclopedia of Electrical and Electronics Engineering

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Ever since the emergence of the electrical computer and the Von Neumann model, computer architects have adhered to a well‐structured hierarchy of memory solutions, clearly trading off performance and capacity with cost. The ubiquitous memory technologies, dominated by SRAM, DRAM, Flash, and magnetic hard disks, are each situated in a well‐defined location within this hierarchy. However, as processes have scaled into deep nanometer feature sizes and the demand for larger capacities and bandwidths increases, these traditional options face tough challenges and may be limited in their ability to continue to provide the new requirements. New technologies, such as phase change memory (PCM), magnetic RAM (MRAM), and resistive RAM (RRAM), have been researched and developed over the recent past in an attempt to meet these demands and replace some or all of the traditional technologies. In this article, the primary technologies are overviewed, including those that currently fill the memory hierarchy pyramid, the primary candidates to join or replace them in the near‐term, and a number of newer candidates that may arise as legitimate solutions in the farther term. In addition, an overview of the current state of processing within the emerging memory technologies is provided, as an attempt to break free of the traditional Von Neumann paradigm to overcome the energy and performance bottlenecks in modern systems.

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Resistive Random Access Memory (ReRAM) Based on Metal Oxides

Cited by 937 publications

References 75 publications

Magnetic field control of hysteretic switching in Co/Al2O3 multilayers by carrier injection

Magnetic field control of hysteretic switching in Co/Al2O3 multilayers by carrier injection

Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2

Emerging Memory Structures for VLSI Circuits

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