Resistive memory devices based on novel functionalized poly(aryl ether)s with pendant azobenzene

Abstract

We designed and synthesized two novel azobenzene functionalized poly(aryl ether)s (PAEs), PAE-azo-1 and PAE-azo-2, from a new azobenzene monomer via nucleophilic aromatic substitution polycondensation. This direct polymerization approach via azobenzene monomer has the advantages of controlling the distribution and amount of the azobenzene chromophores in the polymer. Both of the polymers showed very good thermal stability and excellent solubility for future application in the electronics industry. These polymers were fabricated as films by simple spin-coating and both of them were then prepared as sandwich memory devices. PAE-azo-1 and PAE-azo-2 exhibit write-once-read-many-times-type memory behavior, which can be encoded as “0” and “1,” and possess the low operation voltage below −3.0 V. The memory mechanism was investigated through ultraviolet–visible optical absorption spectrum and the cyclic voltammetry. These obtained results indicate that the novel azobenzene functionalized PAEs are a promising candidate for low power consumption and high-performance materials for data storage.

Ternary memory property of novel polyimide with backbone carbazole moiety and pendant triphenylamine moiety

“…Resistance random access memory (RRAM) is becoming more and more prominent in nonvolatile memory (NVM), which plays a very important role in the development of electronic information products. [1][2][3][4][5][6] Among various RRAMs, resistive memory devices based on polymer have drawn a great deal of attention in the field of data storage due to their low cost, easy processability, and threedimensional (3D) multi-stacking for high-density data storage. Hitherto, polymeric materials, including polyimides (PIs), 7 polymer composites, 8 and conjugated polymers, [9][10][11] have been provided with resistance switching memory effect.…”