Resistive Memory Based on Graphene Oxide Prepared by Multi-Step Spin-Coating

Abstract

Resistive random access memory devices based on the thin film of Graphene Oxide are investigated. Resistive films of different thicknesses are prepared by multi-step spin-coating. Results show that the double spin-coated devices have better performance. The formation of the conductive path and the performance is affected by the thickness of the resistive film. Also, the resistive characteristics of the prepared devices are influenced by the electrodes. Additionally, it is found that the resistive switching process involves the diffusion effect, which has an impact on the device.