Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures

Voora, V. M.; Hofmann, Tino; Schubert, M.; Brandt, M.; Lorenz, Michael; Grundmann, Marius; Ashkenov, N.

doi:10.1063/1.3116122

Cited by 54 publications

(39 citation statements)

References 16 publications

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“…Such asymmetric I-V characteristics have been observed in many metalferroelectric-metal and metal-ferroelectric-semiconductormetal configurations. [27][28][29][30][31][32][33][34][35][36] Different top and bottom electrodes may be the origin of these highly asymmetric I-V behaviors, as previously demonstrated in Au-BFO-ZnO, 29 Pt-BaTiO 3 -ZnO, 28 Au-(Pb,La)(Zr,Ti)O 3 -SrTiO 3 :Nb, 36 Pt-BFO-SRO (Refs. 37 and 38) heterostructures.…”

Section: Resultsmentioning

confidence: 81%

Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

Yao

Chen

Wang

et al. 2012

Journal of Applied Physics

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(001)-oriented BiFeO3 (BFO) thin films were grown on SrxCa1−xRuO3- (SCRO; x = 1, 0.67, 0.33, 0) buffered SrTiO3 (001) substrates using pulsed laser deposition. The microstructural, electrical, ferroelectric, and piezoelectric properties of the thin films were considerably affected by the buffer layers. The interface between the BFO films and the SCRO-buffer layer was found to play a dominant role in determining the electrical and piezoelectric behaviors of the films. We found that films grown on SrRuO3-buffer layers exhibited minimal electrical leakage while films grown on Sr0.33Ca0.67RuO3-buffer layers had the largest piezoelectric response. The origin of this difference is discussed.

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Section: Resultsmentioning

confidence: 81%

Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

Yao

Chen

Wang

et al. 2012

Journal of Applied Physics

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“…30 Transition metals make a multiferroic semiconductor. In particular, Ba-doped ZnO material has not been largely studied, since just ZnO/BaTiO 3 heterojunction [31][32][33][34] and BaO/ZnO interfaces 35 have been recently investigated. The most common atoms inserting in the ZnO structure are N, 36,37 Pd, 37 Mg, 38 Gd 39 atoms and lanthanide metals.…”

Section: Introductionmentioning

confidence: 99%

Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

Lacerda¹,

Lázaro²

2016

Química Nova

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publicado na web em 18/02/2015ZnO is a semiconductor material largely employed in the development of several electronic and optical devices due to its unique electronic, optical, piezo-, ferroelectric and structural properties. This study evaluates the properties of Ba-doped wurtzite-ZnO using quantum mechanical simulations based on the Density Functional Theory (DFT) allied to hybrid functional B3LYP. The Badoping caused increase in lattice parameters and slight distortions at the unit cell angle in a wurtzite structure. In addition, the doping process presented decrease in the band-gap (E g ) at low percentages suggesting band-gap engineering. For low doping amounts, the wavelength characteristic was observed in the visible range; whereas, for middle and high doping amounts, the wavelength belongs to the Ultraviolet range. The Ba atoms also influence the ferroelectric property, which is improved linearly with the doping amount, except for doping at 100% or wurtzite-BaO. The ferroelectric results indicate the ZnO:Ba is an strong option to replace perovskite materials in ferroelectric and flash-type memory devices.

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“…Structural, optical, and electrical analysis were performed as described previously. 12,[54][55][56][57][58][59] The ZnO layers are n-type conductive, with free electron concentration N c between 1 ϫ 10 16 -1 ϫ 10 17 cm −3 . Net donor densities were determined by electrical Hall effect and Infrared Ellipsometry characterization.…”

Section: Experiments a Sample Preparationmentioning

confidence: 99%

Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures

et al. 2010

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M.; Hofmann, Tino; Brandt, M.; Lorenz, M.; Grundmann, M.; Ashkenov, N.; Schmidt, H.; Ianno, Natale J.; and Schubert, Mathias, "Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures" (2010 We present a dielectric continuum model approach for studying the electrical polarization properties of interface polarization coupled BaTiO 3 , BaTiO 3 -ZnO, and ZnO-BaTiO 3 -ZnO thin-film structures consisting of several hundred nanometer thick layers. Our model augments the effects of electric field driven switchable polarization and depletion layer formation with spontaneous interface polarization coupling. Wurtzite-structure ͑piezoelectric͒ n-type ZnO and perovskite-structure ͑ferroelectric͒ highly insulating BaTiO 3 layers were prepared and investigated. The coupling between the nonswitchable spontaneous polarization of ZnO and the electrically switchable spontaneous polarization of BaTiO 3 causes strong asymmetric polarization hysteresis behavior. The n-type ZnO reveals hysteresis-dependent capacitance variations upon formation of depletion layers at the ZnO/BTO interfaces. We obtain a very good agreement between our model generated data and our experiment. Our model approach allows for derivation of the amount and orientation of the spontaneous polarization of the piezoelectric constituents and can be generalized toward multiple-layer piezoelectricsemiconductor ferroelectric heterostructures. We identify interface polarization coupled triple-layer ZnO-BTOZnO heterostructures as two-terminal unipolar ferroelectric Bi-junction transistor for use in memory storage.

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Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures

Cited by 54 publications

References 16 publications

Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures

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