Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

Chen, Yi‐Jiun; Chang, Kuan‐Chang; Chang, Ting‐Chang; Chen, Hsin-Lu; Young, Tai‐Fa; Tsai, Tsung‐Ming; Zhang, Rui; Chu, Tian-Jian; Ciou, Jian-Fa; Lou, Jen‐Chung; Chen, Kai-Huang; Chen, Jung‐Hui; Zheng, Jin‐Cheng; Sze, Simon M.

doi:10.1109/led.2014.2343331

Cited by 45 publications

(15 citation statements)

References 17 publications

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“…D. Boundary condition memristor model (Ascoli-Corinto) (K 4 ) [19] The model [19] described here is based on (3) and (7). The window function represented by ( 7) is proposed by Corinto and Ascoli [19]:…”

Section: Standard Titanium Dioxide Memristor Modelsmentioning

confidence: 99%

“…From this moment on, many research groups attempted to produce memristors based on different materials. Some of the successful results are related to polymeric memristors [5], spin memristive systems [6], carbon-based memristors [7], silicon dioxide memristors, and others [8]. Some of the perspective properties of the memristors denoting their potential applications in non-volatile memory crossbars, reconfigurable analog and digital devices, neural networks, and others are their memory effect, high switching speed, low power consumption, nano-scale dimensions, and a sound compatibility to the present CMOS integrated circuit technology [9,10].…”

Section: Introductionmentioning

confidence: 99%

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A Unified and Open LTSPICE Memristor Model Library

Mladenov

2021

Electronics

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In this paper, a unified and open linear technology simulation program with integrated circuit emphasis (LTSPICE) memristor library is proposed. It is suitable for the analysis, design, and comparison of the basic memristors and memristor-based circuits. The library could be freely used and expanded with new LTSPICE memristor models. The main existing standard memristor models and several enhanced and modified models based on transition metal oxides such as titanium dioxide, hafnium dioxide, and tantalum oxide are included in the library. LTSPICE is one of the best software for analysis and design of electronic schemes. It is an easy to use, widespread, and free product with very good convergence. Memristors have been under intensive analysis in recent years due to their nano-dimensions, low power consumption, high switching speed, and good compatibility with traditional complementary metal oxide semiconductor (CMOS) technology. In this work, their behavior and potential applications in artificial neural networks, reconfigurable schemes, and memory crossbars are investigated using the considered memristor models in the proposed LTSPICE library. Furthermore, a detailed comparison of the presented LTSPICE memristor model library is conducted and related to specific criteria, such as switching speed, operating frequencies, nonlinear ionic drift representation, boundary effects, switching modes, and others.

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Section: Standard Titanium Dioxide Memristor Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Unified and Open LTSPICE Memristor Model Library

Mladenov

2021

Electronics

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“…This mainly arises from its mysterious RS mechanism. As a-C exhibits numerous allostropes, different hypothesis, such as conversions between well conductive sp 2 and less conductive sp 3 hybridization bonds [17], [18], metal ions diffusions [11], [19], [20], and hydrogen/oxygen induced electrochemical redox [21]- [23], have been proposed to interpret its RS behaviour. Within aforementioned hypothesis, the presence/disapperance of highly conductive sp 2 filament inside insulated sp 3 background to provide short/open circuit current has been widely considered as the most likely motivation for RS phenomenon of hydrogen-free a-C such as tetrahedral a-C (ta-C) [24], [25].…”

Section: Introductionmentioning

confidence: 99%

Modeling Electrical Switching Behavior of Carbon Resistive Memory

Wang

Xiong

2020

IEEE Access

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The amorphous carbon-based resistive memory has recently attained vast attention due to its non-volatility, fast switching speed, long data retention, and multilevel recording. However, the memory switching mechanism of amorphous carbon media remains mysterious and thus severely restricted its application prospect. To resolve this issue, a comprehensive three-dimensional model by simultaneously solving the current continuity equation, heat transfer equation, and mass concentration equation, is developed to model the physical conversions between sp 2 and sp 3 clusters. According to simulations, electric field was considered as the sole critical factor that determines the formation of conductive sp 2 filament during the 'SET' process, whereas the 'RESET' process is mainly attributed to the induced high temperature that accelerates the growth of sp 3 cluster and causes the rupture of the sp 2 filament. It was additionally found that the sp 2 filament was preferably formed inside the region having larger sp 2 concentrations, and its rupture usually initiates from the filament center. The threshold voltages of carbon resistive memory for different thickness and different sp 2 fractions were also calculated and exhibited good agreement with experimental measurements. INDEX TERMS Amorphous carbon, filament, sp 2 clusters, switching.

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“…A boarder class called memristive system was proposed later by Chua, in which, memristor is just a special case [10]. Beyond the postulate, the memristor has been found in nano scale by several research groups utilizing different materials such as the titanium-dioxide based memristor [24], the ferroelectric memristor [5], the tungsten-oxide based memristor [4] and the diamond-like carbon based memristor [6]. The memristor with staircase behavior is firstly introduced by Chua [8] and emulated by non-linear resistors and Zener diodes.…”

Section: Introductionmentioning

confidence: 99%

Investigations of the staircase memristor model and applications of memristor-based local connections

Yang

Chen

Wang

2016

Analog Integr Circ Sig Process

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The memristor is postulated by Chua (IEEE Trans Circuit Theory, 18(5): [507][508][509][510][511][512][513][514][515][516][517][518][519] 1971) as the fourth fundamental passive circuit element and experimentally validated by HP labs in 2008. It is an emerging device in nano technology that provides low power consumption as well as high density. In this paper, the staircase memristor model is discussed and investigated with the HP memristor model. By connecting HP memristor models in series or parallel, a staircase memristor model could be constructed and demonstrate staircase behavior. By comparing the staircase memristor model to the general HP memristor model, distinctions between them are demonstrated and this lends themselves to different applications. Further to the memristor-based cellular neural network (CNN), the structure is modified and applied to the echo state network (ESN) where memristors are used as local connections. By this means, the ESN benefits from the simple structure, non-volatility and low power feature of memristors and therefore the complexity and size of the original ESN architecture can be reduced. Meanwhile, the simpler structure still has satisfactory performance in applications compared with the original ESN.

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Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

Cited by 45 publications

References 17 publications

A Unified and Open LTSPICE Memristor Model Library

A Unified and Open LTSPICE Memristor Model Library

Modeling Electrical Switching Behavior of Carbon Resistive Memory

Investigations of the staircase memristor model and applications of memristor-based local connections

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