Resistance switching in perovskite thin films

Ignatiev, A.; Wu, N. J.; Chen, X.; Liu, Shangqing; Papagianni, C.; Strozier, J.

doi:10.1002/pssb.200666805

Cited by 37 publications

(30 citation statements)

References 8 publications

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“…It has clearly distinguished zones of high and low resistance. In compliance with experimental results for the bipolar resistive switching, 12,13,35 this is the case of interest. The impact of several nonlinearities on the V − I-and V − R-plots is shown in Fig.…”

Section: The Crs Composed Of Two Nonlinear Hp-memristorssupporting

confidence: 60%

“…5,6 Various other interesting applications in dynamical systems have recently been discussed as well, such as memristor based oscillators. 7 A single RS-cell consists of a transition metal oxide (TMO) like titanium dioxide [8][9][10][11] or manganites 12,13 sandwiched in between two electrodes, or electrochemical metallization cells, 1,[14][15][16] for which one of the electrodes must be electrochemically active. Connected to an external current or voltage, the elements' resistance toggles between a high and low resistive state, R off and R on , depending on the amount of charge or applied voltage flux.…”

Section: Introductionmentioning

confidence: 99%

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A nonlinear HP-type complementary resistive switch

Radtke

Schimansky‐Geier

2016

AIP Advances

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Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-elements to a single cell, termed the complementary resistive switch (CRS). Motivated by the irregular shape of the filament protruding into the device, we suggest a nonlinearity in the resistance-interpolation function, and thereby expand the original HP-memristor. We numerically simulate and analytically solve this model. Further, the nonlinearity allows for its application to the CRS.

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Section: The Crs Composed Of Two Nonlinear Hp-memristorssupporting

confidence: 60%

Section: Introductionmentioning

confidence: 99%

A nonlinear HP-type complementary resistive switch

Radtke

Schimansky‐Geier

2016

AIP Advances

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“…Generally unipolar switching are seen in binary oxides, 18,19 which form one class of device while the perovskite oxides like PCMO which show bipolar switching behavior 22 form yet another class.…”

Section: V3 Implication On Switchingmentioning

confidence: 99%

Voltage bias induced modification of the transport property of all oxide Pr0.5Ca0.5MnO3/SrTi0.95Nb0.05O3 junctions

Ghosh

Das

Raychaudhuri

2011

Journal of Applied Physics

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In this paper we report what happens to a virgin oxide junction Pr0.5Ca0.5MnO3/SrTi0.95Nb0.05O3 (PCMO/Nb:STO), when it is subjected to cycling of voltage bias of moderate value (±4 V). It is found that the initial cycling leads to formation of a permanent state of lower resistance where the lower resistance arises predominantly due to the development of a shunt across the device film (PCMO). On successive voltage cycling with increasing magnitude, this state transforms into states of successive lower resistance that can be transformed back to the initial stable state on cycling to below a certain bias. A simple model based on p-n junction with shunt has been used to obtain information on the change of the junction on voltage cycling. It has been shown that the observation can be explained if the voltage cycling leads to lowering of the barrier at the interface and also reduction in series resistance. It is suggested that this lowering can be related to the migration of oxygen ions, which causes the vacancies at the junction region. Cross-sectional imaging of the junction shows formation of permanent filamentary bridges across the thickness of the PCMO after the virgin p-n junction is first taken through a voltage cycle, which would explain the appearance of a finite shunt across the p-n junction.

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“…Several kinds of models, including formation and destruction of conductive filament paths [2], field-induced electrochemical migration of oxygen ions [3][4][5], charge trapping and detrapping-induced modification of Schottky-like barrier heights [6,7], and trap controlled space charge limited current [8,9], have been proposed. There are questions as to whether resistance switching happens inside the insulator layers [2,3] or at the interfaces between metal electrodes and insulator layers [4][5][6][7][8][9]. In the case of epitaxial Pr 1−x Ca x MnO 3 , the resistance switching occurs at the interfaces between Pr 1−x Ca x MnO 3 and metal electrodes which can form Schottky-like barrier with Pr 1−x Ca x MnO 3 [6,10].…”

Section: Introductionmentioning

confidence: 99%