Resistance Switching Behavior of ZnO Resistive RAM (RRAM) with a Reduced Graphene Oxide capping layer

Lin, Cheng-Li; Chang, Wen-Hsiung; Huang, Yexiong; Wang, T.W.; Hung, Kuang-Teng

doi:10.7567/ssdm.2014.h-4-4

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials 2014

DOI: 10.7567/ssdm.2014.h-4-4

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Resistance Switching Behavior of ZnO Resistive RAM (RRAM) with a Reduced Graphene Oxide capping layer

Cheng-Li Lin¹,

Wen-Hsiung Chang²,

Yexiong Huang³

et al.

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Resistance Switching Behavior of ZnO Resistive RAM (RRAM) with a Reduced Graphene Oxide capping layer

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