PACS: 65.40.Ba; 72.15.Eb; 72.15.Jf Recent investigations on the heavy fermion CeTIn 5 family (T ¼ Co, Rh, Ir) revealed its fascinating physical properties. For instance, CeCoIn 5 displays unconventional supercon-ductivity already at T C ¼ 2.3 K [1], while CeRhIn 5 is an incommensurate antiferromagnet that transforms to a superconductor with T C ¼ 2.1 K at pressures greater than 1.6 GPa [2]. In addition bulk superconductivity below around 19 K has been observed in PuCoGa 5 [3]. Hoping for interesting properties of other isostructural actinide-based compounds, we have grown single crystals of UCoGa 5 , URhGa 5 and ThCoGa 5 . Our preliminary thermoelectric power measurements done on the U-based compounds showed values as large as 60 mV/K at room temperature, which are uncommon for metallic materials. This motivated us to study the thermoelectric power S(T), the electrical resistivity r(T), and the thermal conductivity k(T), to determine the dimensionless thermoelectric figure of merit ZT ¼ S 2 T/rj. The study has been completed by measurements of the low-temperature specific heat C(T).Single crystals of URhGa 5 were grown by the same method as used for the CeTIn 5 compounds [4]. The X-ray examination showed that URhGa 5 crystallises in the tetragonal HoCoGa 5 -type structure (space group P4/mmm) with a ¼ b ¼ 4.302(1) A and c ¼ 6.803(1) A. Figure 1 presents r(T) along the a-axis for URhGa 5 , while the inset of Fig. 1 displays the specific-heat data down to 0.4 K, plotted as C(T)/T vs. T 2 . Neither the r(T) nor the C(T) results do show any phase transition between 0.4 and 300 K. Moreover, a small Sommerfeld coefficient equal to 7 mJ/K 2 mol as well as transition-metal-like r(T) dependence bring into question a Kondo effect in this material. The ñ (T) data of URhGa 5 in the entire temperature range resemble those for the nonmagnetic ReMe 3 compounds (Re ¼ La and Lu; Me ¼ Sn, Pb, In, and Ga). Their low-T resisphys. stat. sol. (b) 232, No. 1, R4-R6 (2002) 7 . 0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 ρ µΩ .2 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 85K*D 5 T 2 ( K 2 ) 0 2 0 4 0 6 0 8 0 1 0 0 C / T ( m J / K 2 m o l ) 0 2 0 4 0 6 0 8 0 1 0 0 γ = 7 m J / K 2 m o l Θ D = 2 3 0 K ρ = ρ 0 + ρ B -G + B T 3 ρ = ρ 0 + ρ B -G Fig. 1. Temperature dependence of the electrical resistivity along the aaxis for URhGa 5 . Open circles denote the experimental r(T) data; the dashed line denotes resistivity calculated with the generalised BlochGrü neisen formula r(T) B-G þ r 0 ; and the solid line represents the r(T) ¼ r 0 þ r(T) B-G + BT 3 dependence,where B ¼ --1.23 Â 10 --6 mWcm K --3 is a band-structure dependent parameter. Inset presents the heat-capacity data of a URhGa 5 single crystal plotted as C/T versus T 2