Resistance blow-up effect in micro-circuit engineering

Enhanced Device and Circuit‐Level Performance Benchmarking of Graphene Nanoribbon Field‐Effect Transistor against a Nano‐MOSFET with Interconnects

“…Similarly, when parasitic channels are considered in parallel with the conducting channel, the resistance can be higher than what is predicted from Ohm's law. This rise in resistance can increase the RC time constants as demonstrated in [38,39]. GNRFET with proper architecture can extend the domain of More than Moore era in meeting the requirements of the future.…”

“…The rise in the resistance in scaleddown channels also affects the voltage divider and current divider principles, normally based on Ohm's law. When interconnects are considered in series with the channel, the resistance surges for a smaller length resistor, creating the importance of comprehensive study [38]. Similarly, when parasitic channels are considered in parallel with the conducting channel, the resistance can be higher than what is predicted from Ohm's law.…”

Bandgap engineering of carbon allotropes

“…The drive to reduce the size below the scattering-limited mfp is expected to eliminate scattering. This expectation goes against the experimental observation of rapid rise in the resistance [13,21,[23][24][25]. This scattering-free ballistic transport, as is known in the literature, gives a resistance quantum h / 2q 2 = 12.9 k.…”

“…2. The transition to nonlinear regime at the onset of critical electric field corresponding to energy gained in a mean free path is comparable to the thermal energy for nondegenerate statistics and Fermi energy for degenerate statistics [21,22]. 3.…”

“…9, the rise in r / R o is exponential compared to linear rise in R / R o . The potential divider rule between channel and contacts will make the lower-length resistor more resistive [21]. Hence great care is needed to ascertain the critical voltage V c of the contact and channel regions.…”