2010
DOI: 10.1143/jjap.49.06gd05
|View full text |Cite
|
Sign up to set email alerts
|

Resist Residue in Ion Implantation Level Lithography

Abstract: We report the analysis of residual resist remaining after implantation level lithography on the topographical substrate. The problem experienced in a 45-nm-node complementary metal–oxide–semiconductor (CMOS) is described. From our experiment and simulation study, we found that switching exposure wavelength from argon fluoride (ArF) excimer lasers to krypton fluoride (KrF) excimer lasers ameliorates the issue of residual resist on gate stack substrates. In lithography over device stack such as gates, resolution… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 4 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?