Resist outgassing characterization based on the resist compositions and process

Sugie, Norihiko; Takahashi, T.; Katayama, Kazuhiro; Takagi, Isamu; Kikuchi, Yukiko; Tanaka, Hiroyuki; Shiobara, Eishi; Inoue, Soichi

doi:10.1117/12.2011637

Cited by 7 publications

(9 citation statements)

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“…Previous outgassing work [10] has also demonstrated that contamination growth scales with dose until it hits the contamination limited regime, therefore faster resist material could result in lower outgassing in terms of CG (nm).…”

Section: Figmentioning

confidence: 96%

First results of outgas resist family test and correlation between outgas specifications and EUV resist development

Fan¹,

Maruyama

Ayothi

et al. 2015

SPIE Proceedings

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In this paper, we present the first results of witness sample based outgas resist family test to improve the efficiency of outgas testing using EUV resists that have shown proven imaging performance. The concept of resist family testing is to characterize the boundary conditions of outgassing scale from three major components for each resist family. This achievement can significantly reduce the cost and improve the resist outgas learning cycle. We also report the imaging performance and outgas test results of state of the art resists and discuss the consequence of the resist development with recent change of resist outgassing specifications. Three chemically amplified resists selected from higher outgassing materials are investigated, but no significant improvement in resist performance is observed.

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Section: Figmentioning

confidence: 96%

First results of outgas resist family test and correlation between outgas specifications and EUV resist development

Fan¹,

Maruyama

Ayothi

et al. 2015

SPIE Proceedings

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“…The EB-based evaluation tool, EUVOM-9000 (Litho Tech Japan Co.), is located at Tsukuba Japan. The EUV-based tool is set up at the beamline 9 of NewSUBARU which is the synchrotron radiation facility of the University of Hyogo [7][8][9][10][11][12][13]. The resist thicknesses were 60 nm.…”

Section: Resist Outgas Evaluation Conditionsmentioning

confidence: 99%

Recent Progress of EUV Resist Technology in EIDEC

Shiobara¹

2014

J. Photopol. Sci. Technol.

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EUV lithography is one of the promising technologies for manufacturing devices at 16 nm half-pitch node and below. EUV resists are required to improve the resolution, line width roughness (LWR), and sensitivity. However it is generally thought that the lithographic performance is determined by the trade-off relationship among these factors. Moreover, resist outgassing is another issue with EUV resists, as the outgassing of resists during EUV exposure can cause carbon contamination on EUV mirrors, thereby degrading its reflectivity. This paper outlines the recent progresses in EUV resist technology at the EUVL Infrastructure Development Center.

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“…Moreover, we studied noncleanable contamination on the unexposed area and clarified its dependency on the geometry of the WS in the vacuum chamber [3][4][5][6]. Moreover the comparison of the cleanable and noncleanable contamination in the resist family, which consisted of the same components with various protecting ratios and PAG loading, showed a good correlation [7,8]. However, the comparison of noncleanable contamination for resists with various components is not sufficient.…”

Section: Introductionmentioning

confidence: 97%

Contribution of EUV resist components to the non-cleanable contaminations

Shiobara¹,

Takahashi²,

Sugie³

et al. 2014

SPIE Proceedings

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The suppression of outgassing from extreme ultraviolet (EUV) resist needs to be addressed for realizing EUV lithography (EUVL) because outgassing is likely the main contributor to the contamination of mirror optics in EUV scanners, which results in reflectivity loss. Resist outgassing causes two types of contamination: cleanable contamination, involving hydrocarbon contaminants, and noncleanable contamination, involving noncarbon components. The relation of cleanable contamination between EUV-and electron beam (EB)-based evaluations is linear. However, the relation of noncleanable contamination is not clear. In this study, we investigated the contribution of EUV resist components to noncleanable contamination using different photoacid generator components. The cleanability of noncleanable elements (sulfur, iodine, chlorine, and bromine) in contamination films was measured and compared for the EUV-and EB-based outgas testers. The result suggested that the chlorine and bromine contaminants were completely removed after cleaning. On the other hand, sulfur and iodine remained even after cleaning. This suggested that the careful use of iodine in resist materials is necessary due to its high photoabsorption and low cleanability. In addition, the cleaning rate and noncleanability of contaminants in the EUV-based test were larger than in the EB-based test. This suggests that the contamination film in the EUV-based test is more porous than that in the EB-based test.

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Resist outgassing characterization based on the resist compositions and process

Cited by 7 publications

References 0 publications

First results of outgas resist family test and correlation between outgas specifications and EUV resist development

First results of outgas resist family test and correlation between outgas specifications and EUV resist development

Recent Progress of EUV Resist Technology in EIDEC

Contribution of EUV resist components to the non-cleanable contaminations

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