Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms

Possémé, N.; Chevolleau, T.; Bouyssou, R.; David, T.; Arnal, V.; Barnes, Jean‐Paul; Verove, C.; Joubert, O.

doi:10.1116/1.3456182

Cited by 17 publications

(16 citation statements)

References 12 publications

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“…This may be attributed to the slow diffusion of F to the surface, the time scale for which may encompass hours or days. 44 While F is removed by DMA-TMS treatment, the Ti content remains stable according to RBS (53.1 ± 1.5 × 10 15 and 53.0 ± 1.5 × 10 15 at/cm 2 before and after treatment, respectively). This suggests that Ti is not removed simultaneously with F, but remains present on the surface after defluoridation, in agreement with the proposed exchange reaction in eq 1.…”

Section: ■ Results and Discussionmentioning

confidence: 95%

“…43 These plasma-assisted CF x etch processes produce TiF residues on TiN or TiO 2 surfaces, which goes together with surface roughening. 44 The chemical and morphological modification of the substrate surface could affect the DMA-TMS reaction as well as the subsequent ASD process.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…These observations indicate that TiF crystals form on the TiN surface after exposure to CF x etch chemistries. 44 The surface composition of the postetch TiN surface changes upon exposure to DMA-TMS (XPS, Table 1). The −Si(CH 3 ) 3 group density after reaction is 0.46/nm 2 .…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Insight into Selective Surface Reactions of Dimethylamino-trimethylsilane for Area-Selective Deposition of Metal, Nitride, and Oxide

et al. 2020

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Area-selective deposition (ASD) is a promising bottom-up manufacturing solution for catalysts and nanoelectronic devices. However, industrial applications are limited as highly selective ASD processes exist only for few materials. “Passivation/deposition/defect removal” cycles have been proposed to increase selectivity, but cycling requires the passivation to be selective to the growth surface as well as the ASD-grown material. Dimethylamino-trimethylsilane (DMA-TMS) can passivate SiO2 surfaces by covering them with −Si(CH3)3 groups. However, the interaction of DMA-TMS with materials other than SiO2 and Si remains largely unknown and its compatibility with cycling is not yet understood. This work investigates the selectivity of metal, nitride, and oxide atomic layer deposition (ALD) to DMA-TMS-passivated SiO2 as well as the surface chemistry and selectivity of the DMA-TMS reaction. The ALD coreagents O2, NH3, and H2O show low reactivity with the −Si(CH3)3-terminated surface at temperatures up to 300 °C, but the selectivity of ALD strongly depends on the metal precursor and temperature. We demonstrate that DMA-TMS is a selective passivation agent for ASD of and on TiO2, TiN, and Ru selective to SiO2, by TiCl4/H2O, TiCl4/NH3, and EBECHRu/O2 ALD, respectively. We investigate the DMA-TMS reaction on Ru and TiN/TiO2 growth surfaces under conditions that passivate SiO2. At least 77% of the area of the growth surface remains reactive for ALD, confirming the compatibility of DMA-TMS with cycling for ASD. We investigate the impact of changes in surface composition due to patterning before ASD and find that DMA-TMS removes F impurities on TiN and TiO2 surfaces. DMA-TMS selectively passivates SiO2 on three-dimensional (3D) nanopatterns, allowing preferential TiO2 deposition on a nonpassivated growth surface. Thus, the selectivity of DMA-TMS shows great promise to expand the ASD material space as well as to increase selectivity during ASD cycles.

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Section: ■ Results and Discussionmentioning

confidence: 95%

Section: ■ Results and Discussionmentioning

confidence: 99%

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Insight into Selective Surface Reactions of Dimethylamino-trimethylsilane for Area-Selective Deposition of Metal, Nitride, and Oxide

et al. 2020

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“…39 In addition, some residues grow on the metal hard mask after the patterning when the fluorinated TiN is exposed to the moist ambient conditions. 87 To prevent this growth, post etch treatments can be implemented, but they may potentially also participate in porous low-k damage. 88 In order to reduce the plasma-induced damage during the patterning steps, oxygen-free plasmas with additional polymerizing gases to limit plasma radical diffusion at the sidewalls are required.…”

Section: Prevention-metallic Hard Mask and Impact Of Etch Chemistry-mentioning

confidence: 99%

Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage

Lionti

Volksen

Magbitang

et al. 2014

ECS J. Solid State Sci. Technol.

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The increasing sensitivity of porous low dielectric constant materials to process damage constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring structures for advanced technology nodes. In the early 2000s and in anticipation to future low-k related integration challenges, the semiconductor industry started to investigate the possibility to repair or prevent this damage. It is remarkable that the most disruptive solutions proposed today are inspired from the work initiated more than 10 years ago. In this review we first describe the accepted mechanisms for plasma damage, followed by a quick summary of the methods used to quantify its extent on both blanket films and patterned structures. We then report on the past and current strategies developed to mitigate the plasma damage of porous, low-k materials during damascene integration processes.

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“…[1][2][3][4][5] The importance of Ti contamination in dielectric etching in fluorocarbon plasmas has also been pointed out. In dual damascene patterning for interconnect fabrication, TiN hard masks have replaced SiO 2 masks for etching of trenches and vias in porous low-k dielectric films.…”

Section: Introductionmentioning

confidence: 99%

Effect of titanium contamination on oxygen atom recombination probability on plasma conditioned surfaces

Srivastava

Khare

Donnelly

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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As the tolerances in gate dimensions in integrated circuit manufacturing become ever more stringent, plasma process conditions must be very tightly controlled. The reactor chamber wall contamination is one of the major causes of process drifts and is therefore of prime importance. Here, the authors report a study of the role of Ti contamination on an oxidized silicon surface in affecting the heterogeneous recombination coefficient of O in an O2 inductively coupled plasma reactor. Recombination coefficients were measured, using the spinning wall method, with in-situ Auger electron spectroscopy (AES) for surface analysis during plasma operation. The O-atom recombination coefficient on a Ti-free surface was found to be 0.034. After using an evaporation source to deposit a small amount of Ti on the spinning wall (17% of the atomic composition obtained from AES), the O recombination coefficient decreased to 0.022. A possible mechanism is proposed in which Ti reacts with ≡Si-O• sites that are active in recombining O, forming ≡Ti-O• sites that are less efficient for O recombination.

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Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms

Cited by 17 publications

References 12 publications

Insight into Selective Surface Reactions of Dimethylamino-trimethylsilane for Area-Selective Deposition of Metal, Nitride, and Oxide

Insight into Selective Surface Reactions of Dimethylamino-trimethylsilane for Area-Selective Deposition of Metal, Nitride, and Oxide

Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage

Effect of titanium contamination on oxygen atom recombination probability on plasma conditioned surfaces

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