Residual stresses and crystalline quality of heavily boron-doped diamond films analysed by micro-Raman spectroscopy and X-ray diffraction

Ferreira, N.G.; Abramof, E.; Corat, Evaldo José; Trava-Airoldi, V.J.

doi:10.1016/s0008-6223(03)00071-x

Cited by 100 publications

(51 citation statements)

References 23 publications

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“…On the other side, the free radical was only detected at highly boron doped diamond films, condition in which the sp 2 and another impurities such as tungstein carbide (WC) [45,47] and clusters of doping boron atoms [44,48] increase, but the influence of these parameters in our results were not yet evaluated.…”

Section: Resultsmentioning

confidence: 91%

Voltammetric Behavior of Nitrofurazone at Highly Boron Doped Diamond Electrode

et al. 2005

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The electrochemical behavior of nitrofurazone (NFZ) at a highly boron doped diamond (BDD) electrode was studied in Britton-Robinson (BR) buffer using cyclic voltammetry. NFZ was directly reduced to the amine derivative (RNH 2 ) in the pH range of 2.0 to 4.0 in a process involving six (6.0 AE 0.4) electrons and six protons. In the range of pH 7.0 to 12 and, predominantly aqueous medium, the reduction step split into its two components: the reduction of NFZ to the radical anion (RNO 2 .À ) and reduction of RNO 2 .À to hydroxylamine derivative (RNHOH) in processes involving one and three (3.1 AE 0.1) electrons, respectively. On the anodic scan of the voltammograms and at pH 8.0, the oxidation of the hydroxylamine to the nitroso derivative (RNO), was observed in a process involving 2 (1.7 AE 0.2) electrons and 2 protons. In addition and unreported in the literature on any electrode material, was the detection of a new oxidation peak at pH > 8.0, which was observed regardless of whether NFZ had been previously reduced or not. The calculation of n, number of electrons, involved in each electrochemical step was satisfactorily accomplished using the Randles-Š evcik equation.

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Section: Resultsmentioning

confidence: 91%

Voltammetric Behavior of Nitrofurazone at Highly Boron Doped Diamond Electrode

et al. 2005

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“…B-doped chemical-vapor-deposited (CVD) diamond films are widely applied in semiconductor and electrochemical devices [4]. Generally, doped boron atoms substitute for carbon atoms and/or occupy neutrally interstitial positions depending on the doping level [5,6]. In addition, B-doping is presented not only in crystalline grains but also at grain boundaries [7].…”

Section: Introductionmentioning

confidence: 99%

“…In these cases, B-doping leads to changes in lattice parameters and introduces acceptor impurity energy levels near the top of the valence band, and consequently, influences the band structure and optoelectronic properties of those B-doped films [1][2][3][4][5]. As important and powerful nondestructive characterization techniques, Raman spectroscopy and X-ray diffraction (XRD) have been extensively proposed to analyze crystalline structure, boron concentration, and residual stress in B-doped diamond films [6,8,9]. In previous work, thick (with thicknesses of more than ten or ten's microns) B-doped diamond films (including CVD freestanding polycrystalline films and single crystals) have been widely studied [3,4,[10][11][12][13][14] and applied in a variety of fields, such as electrochemistry electrodes, superconductors, and diamond-based optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films

Zhang

et al. 2010

Journal of Crystal Growth

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“…Agreement between these two techniques is not straightforward, [29,30] due to several reasons, including the different domain size of the two techniques and several technical difficulties, as those encountered for the determination of the strain in the SiC phase.…”

Section: X-ray Resultsmentioning

confidence: 99%

Residual Stress Investigation in SiC/MoSi₂(p) Composites

et al. 2007

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Residual stresses in brittle particulate composites can strongly affect the mechanical performances of the material. These stresses can arise during processing due to the difference in thermal expansion coefficients and elastic constants between the reinforcing particles and the matrix. In particular, when the residual stress in the matrix is compressive, the toughness and strength of the composite can be enhanced in comparison with the bulk matrix. [1][2][3][4][5][6][7][8][9] When modeling a particle-reinforced composite, the residual stress in the matrix and inclusions can be a priori estimated by a simplified composite theory. [2,3,6,9] However, an experimental determination of these stresses would allow the stress state of a particular composite to be better assessed and improve the design of composites with specified properties. Few techniques can be used to measure residual stresses in ceramic composites; they include X-ray diffraction, neutron diffraction and Raman piezospectroscopic analyses. Some advantages of the Raman technique are the reduced spot size that, in principle, should allow the residual stresses to be determined at a very low scale, say 1 lm, and the possibility to directly measure the residual stress without any knowledge of the elastic constants of the investigated phase. [10] The determination of residual stresses by Raman spectroscopy is based on the piezo-spectroscopic effect, according to which a spectral shift of the Raman peaks occurs under stress. [10,11] Recently, Raman piezo-spectroscopy has been largely used to investigate the residual stress field inside ceramic material, including particulate-reinforced composites [12][13][14][15] and fiber-reinforced composites. [16][17][18] In this contribution, residual thermal stresses arising in SiC-based materials containing 10 and 30 vol% MoSi 2 particles were investigated by Raman piezo-spectroscopy, measuring the stress-induced wavenumber shift of the 796 cm -1 b-SiC peak in the MoSi 2 -reinforced composites in respect with a zero-stress reference un-reinforced SiC material. A preliminary calibration procedure was carried out for determining the piezo-spectroscopic coefficient pertinent to the b-SiC phase in the materials of the present work, as it is well known that this coefficient strongly depends on many factors specific of the material, such as grain size, presence of secondary phases, porosity, etc, and on the processing parameters. [19] Moreover, experimental results collected by Raman piezospectroscopy were compared with the values measured by X-Ray diffraction analysis. The composites' stress-free temperature was estimated using the equations of the Taya's model. [2] Results and Discussion SiC-MoSi 2 MaterialsThe materials of the present study were sintered by hot pressing and had the following compositions: -92.2 vol% SiC+2.6 vol% Al 2 O 3 + 5.2 vol% Y 2 O 3 , labeled as S0;-90 vol% S0 +10 vol% MoSi 2 , labelled as S10;-70 vol% S0+30 vol% MoSi 2 , labelled as S30.Al 2 O 3 and Y 2 O 3 were selected as sintering aids for the S...

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Residual stresses and crystalline quality of heavily boron-doped diamond films analysed by micro-Raman spectroscopy and X-ray diffraction

Cited by 100 publications

References 23 publications

Voltammetric Behavior of Nitrofurazone at Highly Boron Doped Diamond Electrode

Voltammetric Behavior of Nitrofurazone at Highly Boron Doped Diamond Electrode

Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films

Residual Stress Investigation in SiC/MoSi₂(p) Composites

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Residual stresses and crystalline quality of heavily boron-doped diamond films analysed by micro-Raman spectroscopy and X-ray diffraction

Cited by 100 publications

References 23 publications

Voltammetric Behavior of Nitrofurazone at Highly Boron Doped Diamond Electrode

Voltammetric Behavior of Nitrofurazone at Highly Boron Doped Diamond Electrode

Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films

Residual Stress Investigation in SiC/MoSi2(p) Composites

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Residual Stress Investigation in SiC/MoSi₂(p) Composites