Residual stress/strain analysis in thin films by X-ray diffraction

Noyan, I. C.; Huang, Ting; York, Brian

doi:10.1080/10408439508243733

Cited by 216 publications

(110 citation statements)

References 71 publications

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“…In order to obtain additional information on the structural properties of the ZnO films, we have determined the thin film strains. This technique used the distance between the atomic planes of a crystalline specimen as an internal strain gage 29 . The plane spacing d hkl is normal to the diffraction vector − → L .…”

Section: Methodsmentioning

confidence: 99%

Investigation of laser-ablated ZnO thin films grown with Zn metal target: A structural study

Fouchet

Prellier

Mercey

et al. 2004

Journal of Applied Physics

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High quality ZnO thin films were gown using the pulsed laser deposition technique on (0001) Al 2 O 3 substrates in an oxidizing atmosphere, using a Zn metallic target. We varied the growth conditions such as the deposition temperature and the oxygen pressure. First, using a battery of techniques such as x-rays diffraction, Rutherford Backscattering spectroscopy and atomic force microscopy, we evaluated the structural quality, the stress and the degree of epitaxy of the films. Second, the relations between the deposition conditions * prellier@ismra.fr † On leave from Indian Institute of Technology, Kanpur, India.1 and the structural properties, that are directly related to the nature of the thin films, are discussed qualitatively. Finally, a number of issues on how to get good-quality ZnO films are addressed.

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Section: Methodsmentioning

confidence: 99%

Investigation of laser-ablated ZnO thin films grown with Zn metal target: A structural study

Fouchet

Prellier

Mercey

et al. 2004

Journal of Applied Physics

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“…Data analysis was done using Bruker's software, LEPTOS v6.02. The traditional sin 2 ψ-method was used to study the residual strain in the thin films [4,8]. Atomic force microscopy (AFM) was used to study the film topographic properties.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…As diffraction based investigations are non-destructive and directly measures the spacing between atomic planes as a built-in material strain gauge [7], this is the first option to consider. The strains in the thin films were therefore determined using the XRD sin 2 ψ-technique introduced by Noyen et al [4] and discussed in full by Mudau et al [8]. This method is a differential technique which then does not require standard references for calibration of the stress-free lattice spacing [9] and was also used to determine the strain in Cr thin films [8].…”

Section: Introductionmentioning

confidence: 99%

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Residual Stress in Cr₉₉Al₁ Polycrystalline Thin Films

et al. 2018

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The magnetic phase diagram of bulk Cr100¡xAlx shows interesting behaviour close to the triple point concentration of x 2. Since the magnetic properties of Cr are influenced by dimensionality, stress and strain, this study focussed on the investigation of Cr99Al1 thin films prepared on fused silica substrates with thicknesses t varying from 29 to 452 nm using sputtering techniques. Resistance measurements covering the temperature range 2 to 400 K did not show any clear anomalies that could be indicative of changes in the magnetic ordering. X-ray diffraction (XRD) and atomic force microscopy (AFM) studies indicate the films are polycrystalline textured and that the 80 nm sample has the smallest grain size. In-plane stresses in these thin films were studied using the specialised XRD sin 2 ψ-method. The results show that the stress varies with film thickness. The 29 nm sample has stress in the order of 833 MPa and with increasing film thickness the stress reaches 1471 MPa for the 80 nm layer, where after it systematically reduces for the thicker coatings to 925 MPa for the 452 nm film. The highest stress for the Cr99Al1 thickness sample series is seen in the film with the smallest grain size.

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“…5 The residual stress can affect the effective stiffness of the film, and hence the accurate characterisation of the film's mechanical properties, as well as the performance and reliability of filmbased devices. [6][7][8] A number of techniques, such as wafer curvature measurement, 9 bulge testing, 10-12 X-ray diffraction, 13,14 and Raman spectroscopy, 15 were developed to measure the residual stress of thin films. Nevertheless, these methods have their limitations.…”

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confidence: 99%

A resonant method for determining the residual stress and elastic modulus of a thin film

Wang

Iacopi

et al. 2013

Applied Physics Letters

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By measuring the resonant frequencies of the first two symmetric vibration modes of a circular thin-film diaphragm and solving the Rayleigh-Ritz equation analytically, the residual stress and elastic modulus of the film were determined simultaneously. The results obtained employing this method are in excellent agreement with those obtained numerically in finite element modelling when tested using freestanding circular SiC diaphragms with residual tensile stress. The stress and modulus values are also in reasonably good agreement with those obtained from nanoindentation and wafer curvature measurements, respectively.

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Residual stress/strain analysis in thin films by X-ray diffraction

Cited by 216 publications

References 71 publications

Investigation of laser-ablated ZnO thin films grown with Zn metal target: A structural study

Investigation of laser-ablated ZnO thin films grown with Zn metal target: A structural study

Residual Stress in Cr₉₉Al₁ Polycrystalline Thin Films

A resonant method for determining the residual stress and elastic modulus of a thin film

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Residual stress/strain analysis in thin films by X-ray diffraction

Cited by 216 publications

References 71 publications

Investigation of laser-ablated ZnO thin films grown with Zn metal target: A structural study

Investigation of laser-ablated ZnO thin films grown with Zn metal target: A structural study

Residual Stress in Cr99Al1 Polycrystalline Thin Films

A resonant method for determining the residual stress and elastic modulus of a thin film

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Product

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Residual Stress in Cr₉₉Al₁ Polycrystalline Thin Films