1999
DOI: 10.1016/s0040-6090(99)00528-3
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Residual stress in diamond films: origins and modelling

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Cited by 79 publications
(39 citation statements)
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“…However, Eqn (4) is not valid if bending of the substrate is allowed or if the thickness of the film is higher than a few micrometres. 20 A complete modelling of the thermal stress formation shows that it is a complex function of both the thickness and the elastic properties of the film and substrate. Structural mismatch between the substrate and the film, defects within the film, grain boundaries, etc, may be responsible for the intrinsic stress.…”
Section: Stress Measurementsmentioning
confidence: 99%
“…However, Eqn (4) is not valid if bending of the substrate is allowed or if the thickness of the film is higher than a few micrometres. 20 A complete modelling of the thermal stress formation shows that it is a complex function of both the thickness and the elastic properties of the film and substrate. Structural mismatch between the substrate and the film, defects within the film, grain boundaries, etc, may be responsible for the intrinsic stress.…”
Section: Stress Measurementsmentioning
confidence: 99%
“…In some cases, there can be significant plastic deformation of the Si substrate during diamond film growth. 11,16 This is problematic because it invalidates Eq. ͑5͒, which is based on an elastic substrate.…”
Section: ͑5͒mentioning
confidence: 99%
“…The stress values of x%-ZnO-700 series samples are positive, it is a tensile stress. In terms of the grain boundary relaxation model, it was proposed that the tensile stress is related to voided microstructure at the grain boundary [28]. The different strains in the two series of x%-ZnO samples can be explained as due to the sintering effect at a high temperature.…”
Section: Rietveld Refinement and Strain Analysismentioning
confidence: 99%