Residual stress classification of pulsed DC reactive sputtered aluminum nitride film via large-scale data analysis of optical emission spectroscopy

Lo, Hsiao-Han; Chen, Wei‐Lun; Wang, Peter J.; Lai, Walter; Fuh, Yiin Kuen; Li, Tomi T.

doi:10.1007/s00170-022-08714-2

Cited by 4 publications

(3 citation statements)

References 43 publications

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“…Residual stress correlates with film thickness and crystallite orientation. In-situ OES data was analyzed using PCA to predict the stress state, and RSM was applied to determine the optimum conditions for minimizing residual stress [6]. Another study focused on developing a cost-effective process to produce solar coatings for solar receiver tubes in linear focusing concentrated solar power (CSP) technology.…”

Section: Introductionmentioning

confidence: 99%

“…This study used XRD, AFM, and FE-SEM to determine the microstructure of films. RSM, in conjunction with a mathematical Box-Behnken method [6,14], was employed to setup a DOE model for how the power supply DC pulse factors impact the microstructural properties of films. In addition, this study trained thin film quality prediction models through PCA dimensionality reduction combined with the CatBoost model.…”

Section: Introductionmentioning

confidence: 99%

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Impact of Pulse Parameters of a DC Power Generator on the Microstructural and Mechanical Properties of Sputtered AlN Film with In-Situ OES Data Analysis

et al. 2023

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In the present study, the sputtered aluminum nitride (AlN) films were processed in a reactive pulsed DC magnetron system. We applied a total of 15 different design of experiments (DOEs) on DC pulsed parameters (reverse voltage, pulse frequency, and duty cycle) with Box–Behnken experimental method and response surface method (RSM) to establish a mathematical model by experimental data for interpreting the relationship between independent and response variables. For the characterization of AlN films on the crystal quality, microstructure, thickness, and surface roughness, X-ray diffraction (XRD), atomic force microscopy (AFM), and field emission-scanning electron microscopy (FE-SEM) were utilized. AlN films have different microstructures and surface roughness under different pulse parameters. In addition, in-situ optical emission spectroscopy (OES) was employed to monitor the plasma in real-time, and its data were analyzed by principal component analysis (PCA) for dimensionality reduction and data preprocessing. Through the CatBoost modeling and analysis, we predicted results from XRD in full width at half maximum (FWHM) and SEM in grain size. This investigation identified the optimal pulse parameters for producing high-quality AlN films as a reverse voltage of 50 V, a pulse frequency of 250 kHz, and a duty cycle of 80.6061%. Additionally, a predictive CatBoost model for obtaining film FWHM and grain size was successfully trained.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of Pulse Parameters of a DC Power Generator on the Microstructural and Mechanical Properties of Sputtered AlN Film with In-Situ OES Data Analysis

et al. 2023

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“…The luminescence properties of lanthanide-activated films should be considerably different from those of transition-metal-incorporated III-V hosts. Metal-doped AlN films can be synthesized by different techniques such as sol gel [ 25 ], pulsed laser deposition (PLD), chemical vapor deposition (CVD) [ 26 ], molecular beam epitaxial (MBE) [ 27 ], spray pyrolysis [ 28 ], DC/RF sputtering [ 29 , 30 ] etc. Among these techniques, RF and DC sputtering have attracted significant interest due to their many advantages, such as high deposition rates, low substrate temperatures, easy control over the composition of deposited films, low costs, and uniformity over large areas of the substrates.…”

Section: Introductionmentioning

confidence: 99%

A Study of the Structural and Surface Morphology and Photoluminescence of Ni-Doped AlN Thin Films Grown by Co-Sputtering

et al. 2022

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Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure with a large band gap of 6.2 eV. AlN thin films have several potential applications and areas for study, particularly in optoelectronics. This research study focused on the preparation of Ni-doped AlN thin films by using DC and RF magnetron sputtering for optoelectronic applications. Additionally, a comparative analysis was also carried out on the as-deposited and annealed thin films. Several spectroscopy and microscopy techniques were considered for the characterization of structural (X-ray diffraction), morphological (SEM), chemical bonding (FTIR), and emission (PL spectroscopy) properties. The XRD results show that the thin films have an oriented c-axis hexagonal structure. SEM analysis validated the granular-like morphology of the deposited sample, and FTIR results confirm the presence of chemical bonding in deposited thin films. The photoluminescence (PL) emission spectra exhibit different peaks in the visible region when excited at different wavelengths. A sharp and intense photoluminescence peak was observed at 426 nm in the violet-blue region, which can be attributed to inter-band transitions due to the incorporation of Ni in AlN. Most of the peaks in the PL spectra occurred due to direct-band recombination and indirect impurity-band recombination. After annealing, the intensity of all observed peaks increases drastically due to the development of new phases, resulting in a decrease in defects and a corresponding increase in the crystallinity of the thin film. The observed structural, morphological, and photoluminescence results suggest that Ni: AlN is a promising candidate to be used in optoelectronics applications, specifically in photovoltaic devices and lasers.

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A multi-step deposited AlN films in a DC pulsed sputtering and film characteristics classification with principal component analysis of OES data

Chen

Zhou

Yuan

et al. 2023

Int J Adv Manuf Technol

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Residual stress classification of pulsed DC reactive sputtered aluminum nitride film via large-scale data analysis of optical emission spectroscopy

Cited by 4 publications

References 43 publications

Impact of Pulse Parameters of a DC Power Generator on the Microstructural and Mechanical Properties of Sputtered AlN Film with In-Situ OES Data Analysis

Impact of Pulse Parameters of a DC Power Generator on the Microstructural and Mechanical Properties of Sputtered AlN Film with In-Situ OES Data Analysis

A Study of the Structural and Surface Morphology and Photoluminescence of Ni-Doped AlN Thin Films Grown by Co-Sputtering

A multi-step deposited AlN films in a DC pulsed sputtering and film characteristics classification with principal component analysis of OES data

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