2021
DOI: 10.1016/j.jechem.2021.02.017
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Residual solvent extraction via chemical displacement for efficient and stable perovskite solar cells

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Cited by 21 publications
(19 citation statements)
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“…Defect-related nonradiative losses in sequentially deposited perovskite films must be reduced to further increase the efficiency. Although the shallow-level defects in perovskite grains are the dominant intrinsic defects, the grain boundaries generally contain several deep-level defects. , Two categories of passivators exist that reduce the defects of perovskite films: One passivates the perovskite film surface to reduce the surface defects, e.g., aromatic formamidiniums, potassium chloride, ammonium iodide butyrate, phenethylamine, and choline; the other promotes perovskite crystallization, increases the crystal size, and improves the quality of the active layer to reduce the bulk defects in perovskite films, e.g., pyridine, caffeine, methylenediammonium dichloride, urea, methylammonium acetate, and methylammonium chloride (MACl). Fewer grain boundaries arising from enlarged grains reduce the carrier recombination at the boundaries, prolong the carrier lifetime, improve the carrier mobility, and reduce the overall nonradiative losses in a PSC, which ultimately improves the PCE and stability. To enhance the quality of perovskite films, researchers have developed methods involving SnO 2 modification or the inclusion of an additive in perovskite precursor solutions. As Cl addition to a perovskite precursor solution retarded perovskite formation, , Cl addition to a PbI 2 film using sequential deposition should decrease the number of nucleation sites and increase the grain size.…”
Section: Introductionmentioning
confidence: 99%
“…Defect-related nonradiative losses in sequentially deposited perovskite films must be reduced to further increase the efficiency. Although the shallow-level defects in perovskite grains are the dominant intrinsic defects, the grain boundaries generally contain several deep-level defects. , Two categories of passivators exist that reduce the defects of perovskite films: One passivates the perovskite film surface to reduce the surface defects, e.g., aromatic formamidiniums, potassium chloride, ammonium iodide butyrate, phenethylamine, and choline; the other promotes perovskite crystallization, increases the crystal size, and improves the quality of the active layer to reduce the bulk defects in perovskite films, e.g., pyridine, caffeine, methylenediammonium dichloride, urea, methylammonium acetate, and methylammonium chloride (MACl). Fewer grain boundaries arising from enlarged grains reduce the carrier recombination at the boundaries, prolong the carrier lifetime, improve the carrier mobility, and reduce the overall nonradiative losses in a PSC, which ultimately improves the PCE and stability. To enhance the quality of perovskite films, researchers have developed methods involving SnO 2 modification or the inclusion of an additive in perovskite precursor solutions. As Cl addition to a perovskite precursor solution retarded perovskite formation, , Cl addition to a PbI 2 film using sequential deposition should decrease the number of nucleation sites and increase the grain size.…”
Section: Introductionmentioning
confidence: 99%
“…Backward carrier recombination dynamics is well reflected by photovoltage decay behaviors. [ 44,45 ] As in Figure S11, Supporting Information, the normalized photovoltage decay time is extended after being NHS treated, indicating that carrier recombination was suppressed at the interface. [ 46 ] Under the open‐circuit condition on illumination, electron–hole pairs are generated in the perovskite layer.…”
Section: Resultsmentioning
confidence: 99%
“…To further confirm the reduced interface traps after EDAFa 2 introduction, the trap density ( N t ) in the Sn-based perovskite film before and after EDAFa 2 treatment was quantified using space-charge-limited current (SCLC) measurements. N t can be calculated by the following equation N t = 2ε 0 ε r V TFL /( qL 2 ), where ε 0 is the vacuum permittivity, ε r is the relative dielectric constant of perovskite, V TFL is the trap-filled limit voltage, q is the elemental charge, and L is the layer thickness . The hole-only devices with structure of ITO/PEDOT:PSS/perovskite (∼390 nm)/TFB (∼80 nm)/MoO 3 (12 nm)/Ag (100 nm) were fabricated, and typical double logarithmic J – V curves are shown in Figure a,b.…”
Section: Results and Discussionmentioning
confidence: 99%