Residual oxygen contamination of InAlGaAs SQW high-power laser diodes

Properties of solution TMI as an OMVPE source

“…All growth parameters were also kept as constant as possible. 8 The same trends were seen as in the AlInAs growth study detailed above. The first studies compared solid adduct purified TMI with Solution TMI made from adduct purified TMI.…”

“…Full details of the growth structure, the device processing and discussion of the device results have been published elsewhere. 8 The results are reproduced here in Fig. 8 (which shows the optical power verses current plot (P/ I) for 1200 µm × 150 µm oxide stripe defined lasers without facet coating [measured at 15°C]) and Fig.…”

“…The devices showed lower threshold currents and longer lifetimes for the same waveguide geometry, 8 compared to those grown from Solution TMI made from adduct purified material. Full details of the growth structure, the device processing and discussion of the device results have been published elsewhere.…”

“…Any volatile oxygen impurities in the sources would reduce the device lifetimes by increasing the threshold and operating currents under high power conditions. The other precursors used in the MOVPE process were purified by a combination of physical and chemical techniques 6,8 to ensure low residual oxygen background levels, to be confident that the oxygen levels measured could be attributed to the TMI sources. All growth parameters were also kept as constant as possible.…”

Influence of oxygen in AlGaAs-based laser structures with Al-Free active region on device properties

“…The addition of indium into the AlGaAs quantum well (QW) suppresses the propagation of dislocations as the bulk degradation mechanism in Al-containing QW-laser devices and introduces a considerable amount of compressive strain leading to larger maximum output powers 5 and better reliability. 6 A 1.2 W continuous wave (cw) output power at 743 nm over 2000 h (100 mm stripe width) has been demonstrated with a QW containing 15% In. 6 For a long time it has been reported that oxygen incorporated into the Al-containing active regions degrades the laser performance.…”