Residual defects in low-dose arsenic-implanted silicon after high-temperature annealing

Sagara, A.; Hiraiwa, Miori; Uedono, Akira; Oshima, Nobuyuki; Suzuki, Ryoichi; Shibata, Satoshi

doi:10.1016/j.nimb.2013.12.026

Cited by 6 publications

(9 citation statements)

References 38 publications

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“…The TO-line intensity of the only-RTA-applied sample (i.e., additional FA temperature was 0 • C) is clearly much lower than that of the reference sample, suggesting that the TO-line emission had been suppressed by non-radiative decay centers, i.e., some type of defect and/or crystal disorder. This provides strong evidence of the presence of residual damage, as we had discovered in previous studies [2]- [4]. In contrast, the TO-line intensity of the samples with additional FA at 300 • C and 400 • C gradually increased with increased annealing temperature, indicating that the vacancy-type defects mentioned above tended to be eliminated and the total number of defects was suppressed after FA.…”

Section: Methodssupporting

confidence: 78%

“…We detected and characterized these defects using high-sensitivity optical characterization, specifically cathodoluminescence (CL) [5], [6] and positron annihilation spectroscopy (PAS) [7]. We confirmed the defects to be created by non-equilibrium states that occur during the extremely rapid cooling step of the RTA sequence [3], [4]. These defects were identified as small numbers of point defects.…”

Section: Introductionmentioning

confidence: 81%

“…In the case of low-dose implant conditions, which is Manuscript lower than the critical dose of amorphization (<10 13 cm −2 ), defects were confirmed to persist after applying RTA even with high-temperature (1100 • C) [3], [4]. We detected and characterized these defects using high-sensitivity optical characterization, specifically cathodoluminescence (CL) [5], [6] and positron annihilation spectroscopy (PAS) [7].…”

Section: Introductionmentioning

confidence: 97%

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Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Sagara

Uedono

Shibata

2015

IEEE Trans. Semicond. Manufact.

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We investigated the thermal behavior of defects remaining in low-dose (<10 13 cm −2 ) arsenic-and boronimplanted Si after high-temperature (1100 • C) rapid thermal annealing (RTA). The defects remaining after RTA were characterized as vacancy-type defects, and confirmed to be created by nonequilibrium states that occur during the extremely rapid cooling step of the RTA sequence. They were gradually removed by applying additional furnace annealing (FA) (i.e., thermal equilibrium heating process) at 300-400 • C. At the range of 500-600 • C, however, carbon-and oxygen-related point defects were newly created. These defects were confirmed to be eliminated at 700 • C, and the crystal quality was significantly improved. When using a rapid thermal process for heat treatment after low-dose impurity implantation, it is necessary to apply an equilibrium thermal treatment at >700 • C to remove residual damage as well as to activate impurities.Index Terms-Residual damage, ion implantation, rapid thermal annealing (RTA), silicon.

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Section: Methodssupporting

confidence: 78%

Section: Introductionmentioning

confidence: 81%

Section: Introductionmentioning

confidence: 97%

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Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Sagara

Uedono

Shibata

2015

IEEE Trans. Semicond. Manufact.

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“…[9][10][11] Recently, detailed thermal behavior of residual damage in low-dose arsenic (As) and boron (B) implanted Si, after high-temperature rapid thermal annealing (RTA), has been investigated using cathode luminescence (CL). [12][13][14] However, most of these characterization techniques require sample preparation and restrict sample size. A non-destructive (hopefully non-contact, as well) characterization technique, without special sample preparation and sample size limitation, is desired for in-line monitoring of potential process and/or equipment related problems.…”

mentioning

confidence: 99%

“…[12][13][14] The defects remaining after RTA were characterized to be vacancy-type defects created during extremely rapid (nonequilibrium) cooling steps of the RTA sequence. Additional thermal equilibrium (or isothermal) heating in a furnace-type system, even at 300∼400…”

mentioning

confidence: 99%

Room Temperature Photoluminescence Characterization of Low Dose As+ Implanted Si after Rapid Thermal Annealing

Yoo¹,

Yoshimoto

Sagara

et al. 2015

ECS Solid State Letters

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Arsenic (As + 150 keV, 1.0 × 10 13 cm −2 ) implanted p − -Si(100) wafers were spike annealed at 1100 • C for 1s in a commercially available rapid thermal annealing (RTA) system. Significant variations in sheet resistance were observed while As dopant profiles, measured by secondary ion mass spectroscopy (SIMS), were almost identical. Photoluminescence (PL) spectra were measured from all wafers under three different excitation wavelengths (532, 650 and 827 nm) at room temperature. PL spectra showed large intensity variation, corresponding to the sheet resistance. PL excitation wavelength dependence suggests the variation in density of residual damage as the possible cause of sheet resistance variation. Charge coupled devices (CCDs) have been widely used in scientific instruments and digital cameras until recently.1 The gate structure used in CCDs to transfer electrical charges (image data) to the edge of the sensor, requires a separate power source (more power) and sequential data transfer (slower speed). 2,3For portable device applications, smaller devices with low power consumption are strongly desired. Complementary metal-oxidesemiconductor (CMOS) image sensors, with reduced power consumption and fast data transfer, have become a common alternative choice for image sensors.3 These devices consist of large arrays of photodiodes and amplifiers. The photodiodes accumulate electrical charge and increase voltage when exposed to light. The voltage is amplified and transmitted as electrical signals. Since the CMOS image sensors have the same basic structure as CMOS memory devices, they are cost effectively mass produced, using well-established manufacturing technology. 1Generally, CMOS image sensors generate more electrical noise than CCDs and can result in poor image quality due to performance fluctuations in the large array of photodiodes and amplifiers.3 Small performance differences in photodiodes and amplifiers can result in noise in the output image. The noise problem increases as cell size is reduced and the number of cells in a chip increases. Noise reduction approaches commonly used to overcome this problem are; improved device level performance variation and reduction of the variation of background noise. Device-level noise reduction efforts are also becoming increasingly important. 4 High energy, low dose ion implant conditions are often used in CMOS image sensor fabrication processes. Average dopant concentration in the implanted junctions are 2 ∼ 3 orders of magnitude lower than those of advanced CMOS logic and memory devices. Small amounts of defects and residual damage have a significant impact in the electrical properties of implanted junctions after RTA. To reduce noise in CMOS image sensors, elimination of defects and residual damage are very important steps. The room temperature photoluminescence (RTPL) technique can be used for finding and reducing the electrically active and/or non-radiative defects and damage in the early stage of CMOS image sensor fabrication steps.It is well known that metal c...

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Pore structure analysis of ionic liquid-templated porous silica using positron annihilation lifetime spectroscopy

Sagara

Yabe

Chen

et al. 2020

Microporous and Mesoporous Materials

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Residual defects in low-dose arsenic-implanted silicon after high-temperature annealing

Cited by 6 publications

References 38 publications

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Room Temperature Photoluminescence Characterization of Low Dose As+ Implanted Si after Rapid Thermal Annealing

Pore structure analysis of ionic liquid-templated porous silica using positron annihilation lifetime spectroscopy

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