Residual and absolute timing jitter in actively mode-locked semiconductor lasers

Derickson, Dennis; Már, A.; Bowers, John E.

doi:10.1049/el:19901308

Cited by 61 publications

(20 citation statements)

References 3 publications

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“…Our measurement technique is based on the von der Linde method [3], but overcomes the drawbacks of oscillator noise and spectrum analyzer thermal noise, which reduces the important high frequency dynamic-range. Similar residual phase-noise measurements have been performed at lower repetition rates [4][5][6][7] such as 10 GHz or lower. However, when increasing the repetition rate the upper limit of integration scales with this rate and requires a very high bandwidth of the electronics.…”

supporting

confidence: 64%

Measurement of record-low residual jitter in 40-GHz monolithic mode-locked lasers

Larsson

Yvind

Hvam

2005

(CLEO). Conference on Lasers and Electro-Optics, 2005.

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supporting

confidence: 64%

Measurement of record-low residual jitter in 40-GHz monolithic mode-locked lasers

Larsson

Yvind

Hvam

2005

(CLEO). Conference on Lasers and Electro-Optics, 2005.

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“…The spectral FWHM was 3.8 nm, indicating the pulses are highly chirped. The absolute jitter (1 kHz-100 MHz) of the ML-SEL was 2 ps with 15 dBm of RF power injected, and the residual jitter (1 kHz-100 MHz), which is the jitter of the laser above the jitter of the RF source [30], was just 199 fs.…”

Section: Fabry-perot Mode Locked Lasers At 40 and 10 Ghzmentioning

confidence: 99%

Mode locked and distributed feedback silicon evanescent lasers

Koch¹,

Fang²,

Lively³

et al. 2009

Laser & Photonics Reviews

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Electrically pumped lasers that can be made on silicon and integrated with other components are important in order to take full advantage of the capabilities of silicon photonics. In this paper we review two specific types of hybrid silicon evanescent lasers that can fulfill these requirements. We discuss recent results of distributed feedback (DFB) lasers and mode locked lasers made on silicon using evanescent coupling to thin films of III-V material. Device designs and test results are discussed in detail.An integrated 1 Tb/s silicon based transmitter using 25 WDM channels each with a 40 Gb/s signal.

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“…In the reported 640 Gbit/s ×2 transmission experiment [7], the high-repetitionrate OTDM transmission was derived by transmitting a 10 Gbit/s pulse train through a PLC MUX, rather than multiplexing 64 independent mode-locked laser sources. Therefore, it is important to develop sources with low residual phase noise [4,5,65]. The lowest reported residual phase noise for gigahertz-repetition-rate semiconductor lasers is 50 fs (100 Hz to 100 MHz, 12 ps pulse width) [65], 86 fs (10 Hz to 4.5 GHz, 6.7 ps pulses) [4], and 94 fs (10 Hz to 5 GHz, 3.5 ps) [58].…”

Section: Timing Jittermentioning

confidence: 99%

“…Therefore, it is important to develop sources with low residual phase noise [4,5,65]. The lowest reported residual phase noise for gigahertz-repetition-rate semiconductor lasers is 50 fs (100 Hz to 100 MHz, 12 ps pulse width) [65], 86 fs (10 Hz to 4.5 GHz, 6.7 ps pulses) [4], and 94 fs (10 Hz to 5 GHz, 3.5 ps) [58]. Even though the gigahertzrepetition-rate mode-locked erbium-doped fiber laser literature reports timing jitters of < 10 fs (100 Hz to 1 MHz, 1 ps pulse width) [61], 16 fs (100 Hz to 100 kHz, 3 ps) [66], 120 fs (100 Hz to 10 MHz, 1 ps) [51], the total timing jitter should be integrated out to half the repetition-rate of the laser (i.e.…”

Section: Timing Jittermentioning

confidence: 99%

Semiconductor mode-locked lasers as pulse sources for high bit rate data transmission

2005

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Semiconductor mode-locked lasers are evaluated as pulse sources for high bit rate data transmission. This chapter describes the requirements of OTDM sources for high bit rate data transmission, compares various OTDM source technologies, describes three semiconductor mode-locked laser cavity designs, explains the impact of timing jitter and amplitude noise on OTDM performance, illustrates how to characterize noise of OTDM sources using rf and optical techniques, shows how to interpret the noise measurements, and finally discusses semiconductor mode-locked laser cavity optimizations that can achieve low noise performance.A critical part of the design of a communication system is the choice of the transmitter or source laser. High bit rate optical time-division multiplexed (OTDM) systems in particular demand reliable short pulse generation at high repetition rates and turn-key operation. Semiconductor mode-locked lasers are becoming increasingly attractive and viable for such applications.Semiconductor mode-locked lasers can be compact sources of picosecond, highrepetition rate pulses of light at the popular telecommunication wavelength of 1.5 μm [1,2]. Recent advances in semiconductor processing and cavity design have led to the advent of ultra-stable [3] and ultralow-noise [4,5] performance. With proper temperature control of the semiconductor device and a clean electric supply for the bias and injection current, the diode can remain mode-locked for days. Single-channel, singlepolarization transmission rates up to 160 Gb/s [6] have been successfully demonstrated using mode-locked semiconductor lasers, and detailed characterization of their noise

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Residual and absolute timing jitter in actively mode-locked semiconductor lasers

Cited by 61 publications

References 3 publications

Measurement of record-low residual jitter in 40-GHz monolithic mode-locked lasers

Measurement of record-low residual jitter in 40-GHz monolithic mode-locked lasers

Mode locked and distributed feedback silicon evanescent lasers

Semiconductor mode-locked lasers as pulse sources for high bit rate data transmission

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