2015
DOI: 10.3390/mi6020281
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Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

Abstract: Abstract:We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface r… Show more

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Cited by 20 publications
(8 citation statements)
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“…The normal MEMS processes have been used to fabricate this accelerometer. The AlN film is etched by the ICP process with Cl 2 /BCl 3 /Ar [22]. The entire structure is released by the ICP isotropic etching process with SF 6 .…”
Section: Fabricationmentioning
confidence: 99%
“…The normal MEMS processes have been used to fabricate this accelerometer. The AlN film is etched by the ICP process with Cl 2 /BCl 3 /Ar [22]. The entire structure is released by the ICP isotropic etching process with SF 6 .…”
Section: Fabricationmentioning
confidence: 99%
“…In the fabrication, the patterning processes are the key points. The AlN film was etched by inductively coupled plasma (ICP) etching process with Cl 2 /BCl 3 /Ar [28]. The whole structure was released from Si substrate by ICP isotropic etching process with SF 6 .…”
Section: Fabrication Processmentioning
confidence: 99%
“…Aluminum is a material with great potential for development in micro fabrication, 1,2 especially in various MEMS applications. 3,4 In addition, due to its high strength, acceptable corrosion resistance, and machinability, the aluminum alloys are widely used in building and industry. 5…”
Section: Introductionmentioning
confidence: 99%