Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation

Lin, Zhong; Lei, Yu; Subramanian, S.; Briggs, Natalie; Wang, Yuanxi; Lo, Chi-Chun; Yalon, Eilam; Lloyd, D.; Wu, Sanfeng; Koski, Kristie J.; Clark, Richard J.; Das, Saptarshi; Wallace, Robert M.; Kuech, T. F.; Bunch, J. Scott; Li, Xiaoqin; Chen, Zhihong; Pop, Eric; Crespi, Vincent H.; Robinson, Joshua A.; Terrones, Mauricio

doi:10.1063/1.5042598

Cited by 33 publications

(35 citation statements)

References 152 publications

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“…graphene usually supported on a solid substrate, as well as vertically stacked heterostructures derived from layered materials. The 2D materials also offer the opportunity to tune properties via intercalation, and such opportunity has been, and continues to be, heavily explored [2,3,4,5,6,7]. Intercalation can also be used as a means to promote exfoliation of layered materials or to decouple an as-grown layer from the substrate, hence facilitating production of 2D materials [8,9,10,11,12,13,14].…”

Section: Introductionmentioning

confidence: 99%

Energetics of Cu adsorption and intercalation at graphite step edges

et al. 2019

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To assess the energetics of Cu intercalation on defective graphite, the chemical potentials and binding energies for Cu at graphite step edges are calculated for three main configurations: an isolated atom; a chain; and an atom attached to a chain. As expected, for Cu interacting directly with a graphite step edge, the strength of interaction depends on the stability of the step, with Cu binding more strongly at a less-stable step. However, the relationship is reversed when considering binding of a Cu atom attached to a chain. Taken together, these trends mean that if the graphite step is less stable, as for the zigzag step, then decorating the step with a Cu chain facilitates intercalation by additional Cu atoms (which are less strongly bound to the decorated step). For more stable steps, intercalation is optimal without decoration. We also calculate the diffusion barrier for atomic Cu on top of the graphite terrace, and in the uppermost gallery, finding values of 0.008 eV and 0.021 eV, respectively. These values are very small, indicating that the minimum barrier for a Cu atom to detach from a step and move to a terrace or gallery is dominated by the difference in binding energies. For intercalation, this minimum barrier is 1.4 to 3.1 eV and depends strongly on step configuration.

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Section: Introductionmentioning

confidence: 99%

Energetics of Cu adsorption and intercalation at graphite step edges

et al. 2019

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“…Since defects in such materials are no longer considered to be a problem to be avoided, they are rather used to tailor the desired material properties and the defects are harnessed to fulfill the desired functions. 148 A large emphasis is currently placed on quantum emitters such as nitrogen vacancy centers in diamonds 149,150 or hBN as they bear potential in quantum information sciences. Correlation of the electronic properties with optical ones and parsing the photon stream can yield insight into the coherence length, emission linewidth, and photon quantum entanglement.…”

Section: Discussionmentioning

confidence: 99%

Probing Semiconductor Properties with Optical Scanning Tunneling Microscopy

Nienhaus

2020

Joule

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Studying nanoscale photophysical processes is mandatory to fully understand the complex optoelectronic properties in semiconductor materials used in photovoltaics and light emitting diodes. In this perspective, we target specific scanning probe techniques, which combine scanning tunneling microscopy (STM) with optical methods to unravel the localized optoelectronic properties of semiconductors under realistic electric and optical fields, down to the nanoscale. Combining optical spectroscopy with STM yields a powerful platform that allows for simultaneous imaging of the surface morphology and the electronic structure down to the atomic level, a resolution that is otherwise not accessible due to the optical diffraction limit. Incident wavelengths spanning the electromagnetic spectrum from the terahertz region to X-rays have been coupled into the STM tip-sample junction to investigate the nanoscale properties of semiconductor materials, whereas the reverse process of luminescence can give insight on local recombination processes. Imagine the potential of a tool capable of detecting both localized absorption and spontaneous and stimulated emission processes of semiconductor materials at the nanoscale. The role of every atom, defect, or electronic interaction could be disentangled, tailored, or harnessed to its maximum capacity.

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“…From Fig. 2 (b), it can be worth noting that the magnetic moments are further modified under various applied strains, which explore possible directions for TMDCs based spintronic and straintronic application 8,29 . Among all the applied strains, the maximum magnetic moment of 3.25 µ B and 2.69 µ B are achieved for +2% tensile and -2% compressive strain, respectively.…”

Section: Supercellmentioning

confidence: 97%

“…In this work, we studied a possible emergence of FM in Co-doped W S 2 ML under strain engineering, which may have applications in TMDC based straintronics 29 . We employed DFT calculations to understand the mechanism of FM behavior in Co-doped W S 2 ML at biaxial compressive and tensile strain.…”

Section: Introductionmentioning

confidence: 99%

Strain-mediated Ferromagnetism and Low-field Magnetic Reversal in Co Doped Monolayer W S2

Jena

Mallik

Sahu

et al. 2021

Preprint

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Strain-mediated magnetism in 2D materials and dilute magnetic semiconductors hold multi-functional applications for future nano-electronics. Herein, First principles calculations are employed to study the influence of biaxial strain on the magnetic properties of Co-doped monolayer W S2. The non-magnetic W S2 shows ferromagnetic signature upon Co doping due to spin polarization, which is further improved at low compressive (-2 %) and tensile (+2 %) strains. From the PDOS and spin density analysis, the opposite magnetic ordering is found to be favourable under the application of compressive and tensile strains. The double exchange interaction and p-d hybridization mechanisms make Co-doped W S2 a potential host for magnetism. More importantly, the competition between exchange and crystal field splittings, i.e. (∆ ex > ∆ c f s), of the Co-atom play pivotal roles in deciding the values of the magnetic moments under applied strain. Micromagnetic simulation reveals, the ferromagnetic behavior calculated from DFT exhibits low-field magnetic reversal (190 Oe). Moreover, the spins of Co-doped W S2 are slightly tilted from the easy axis orientations showing slanted ferromagnetic hysteresis loop. The ferromagnetic nature of Co-doped W S2 suppresses beyond ±2 % strain, which is reflected in terms of decrease in the coercivity in the micromagnetic simulation. The understanding of low-field magnetic reversal and spin orientations in Co-doped W S2 may pave the way for next-generation spintronics and straintronics applications.

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Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation

Cited by 33 publications

References 152 publications

Energetics of Cu adsorption and intercalation at graphite step edges

Energetics of Cu adsorption and intercalation at graphite step edges

Probing Semiconductor Properties with Optical Scanning Tunneling Microscopy

Strain-mediated Ferromagnetism and Low-field Magnetic Reversal in Co Doped Monolayer W S2

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