Research Status of High-Purity Metals Prepared by Zone Refining

Liang, Yu; Kang, Xiaoan; Chen, Luona; Luo, Kun; Jiang, Yanli; Cao, Xia

doi:10.3390/ma14082064

Cited by 10 publications

(3 citation statements)

References 37 publications

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“…[17][18][19][20][21] This process is used to ultra-purify many metals and materials. [11,23,139,[144][145][146] It is the most efficient purification method as it can purify materials even up to 13N, without any other associate refining technique. [146] Purification efficiency can be improved by optimizing the molten zone length, zone travel rate, and stirring of the zone.…”

Section: Physical Purification Techniquesmentioning

confidence: 99%

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

Ghosh,

Mani

2024

Cryst. Res. Technol.

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Ultrapure gallium up to 99.9999%/ 99.99999% (6N/7N) purity level is a highly demanding material needed for the growth of gallium‐based group III–V semiconductor compounds and optoelectronic devices. However, general extraction of gallium from Bayer liquor contains high impurity content and ultra‐purification of the same cannot be accomplished by a single step. Thus, the purpose of this review is to assess various purification processes for the production of ultra‐pure gallium and to critically examine its applications in the optoelectronics industry. Through this research survey, it is found that zone refining of the zone melting process stands tall over other methods in purifying materials even up to 13N. Hence, scientists are adopting detailed mathematical models and simulation tools for designing unique zone refining systems for material purification. Current‐day technology even adopts intelligence methods such as machine learning, which sheds light on the importance of different zone refining parameters that influence the purification process. Here, the practical aspects of zone refining and how the feedback from the theoretical models or performance prediction through intelligence methods can be effectively incorporated into practice have also been emphasized

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Section: Physical Purification Techniquesmentioning

confidence: 99%

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

Ghosh,

Mani

2024

Cryst. Res. Technol.

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“…Thus, the interface of freezing can attract or reject selected kinds of solutes, leading to better-purified materials. Zone refining seeks suitable application in synthesizing silicon-on-insulator (SOI) films [64][65][66][67] and ultra-pure materials [68][69][70][71][72][73][74] as super-conducting and semi-conducting [75][76][77][78] substances.…”

Section: Reviewmentioning

confidence: 99%

A review on single crystal and thin film Si–Ge alloy: growth and applications

Basu

2022

Mater. Adv.

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“…1 High purity indium is widely used in the electronic industry, ITO film, semiconductors, CIGS solar cells, and other new materials due to its softness, low melting point, high boiling point, good flexibility, and strong corrosion resistance. 2,3 The high-tech field requires higher purity of indium, even though ppm-level impurities will affect the performance of products, which is highly crucial for electronic devices. [4][5][6] With the development of information technology, ITO film has become the main functional component of liquid crystal displays.…”

Section: Introductionmentioning

confidence: 99%

Effect of Tin Ion on Electrodeposition Behavior of Indium

Hou

WANG

et al. 2022

Electrochemistry

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Electrorefining is an effective method for preparing high-purity indium. To realize the control of impurity Sn in crude indium electrolytic refining, electrochemical test methods, such as cyclic voltammetry (CV), and chronoamperometry (CA) were mainly used to study the electrochemical behavior of indium. The results show that when a few of SnSO 4 was added to the electrolyte containing indium sulfate, in the meantime, the Sn 2+ concentration reached 5000 ppm, in the electrolysis process, the impurity Sn in the cathode was appeared to precipitate before the indium precipitated. The electrodeposition of indium was irreversible, controlled by diffusion steps, and In 3+ reduction was carried out by fractional steps, transferring one electron at a time. The diffusion coefficient of In 3+ calculated by cyclic voltammetry was 1.02 × 10 −7 cm 2 /s, and the average charge transfer coefficient was 0.081. The nucleation mechanism of indium conformed to three-dimensional instantaneous nucleation. The results provide theoretical guidance for electrolytic refining of crude indium and electrochemical regulation of impurities.

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Research Status of High-Purity Metals Prepared by Zone Refining

Cited by 10 publications

References 37 publications

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

A review on single crystal and thin film Si–Ge alloy: growth and applications

Effect of Tin Ion on Electrodeposition Behavior of Indium

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