Research progress of puckered honeycomb monolayers

Abstract

Graphene, as the representative of two-dimensional materials, has varous novel physical properties and potential applications. The intrinsic zero band gap of graphene limits its application in semiconductor devices, and thus the search for new semiconducting alternative materials has become a current research hotspot. Phosphorene is the monolayer of black phosphorus and has a puckered honeycomb structure. Its advanced properties, such as adjustable direct band gap, high carrier mobility and in-plane anisotropy and so on, have recently aroused great research interest, thus opening up the research field of puckered honeycomb monolayers in group V elements. In this article, we first focus on the structure, synthesis and physical properties of five single-element two-dimensional materials (nitrogen, phosphorus, arsenic, antimony and bismuth) each with puckered honeycomb structure. Second, some binary two-dimensional materials with puckered honeycomb structure are discussed, including IV-VI and V-V compounds. These materials have their own unique crystal symmetry, and the properties can be controlled by changing their structures and dimensions. Finally, we also make a summary on some current challenges that need to be solved, and the possible future applications of these two-dimensional materials are also presented.

Sub-5 nm Gate-Length Monolayer Selenene Transistors

“…According to Figure 7 , the competition between m* and DOS results in a dominant factor affecting I on . The anisotropy has been found in many 2D materials, such as ML BP [ 34 , 35 ], 2D BiAs [ 36 ], ML and BL tellurene [ 8 , 9 ], and ML selinene [ 19 ], and so on. The physical properties (elastic modulus, effective mass, deformation potential, and carrier mobility) of ML selenene are different between the arm- and zig-direction.…”

Atomic and electronic structure of monolayer ferroelectric GeS on Cu(111)

“…传 统钙钛矿结构铁电薄膜由于临界尺寸效应、强退极 化场和表面悬挂键等因素, 造成薄膜的自发极化特 性只能存在于几纳米临界尺寸厚度 [5][6][7] . 然而, 随着 如化学功能化的磷烯和单层MoS 2 [8][9][10] ; 2)本征二维 铁电体, 例如SnTe, CuInP 2 S 6 , -In 2 Se 3 和Ⅳ-Ⅵ 族材料等 [11][12][13][14] ; 3)层间滑移铁电体, 例如WTe 2 , InSe和3R-MoS 2 双层/多层体系等 [15][16][17] . 对于本 在众多理论计算预言的本征铁电体材料中, 第 Ⅳ主族单硫属化合物(GeS, GeSe, SnS, SnSe)具 有类似于黑磷的正交结构, 理论计算表明其单层结 构具有非常强和稳定的面内铁电极化, 其居里温度 甚至高于室温, 并且具有良好的化学稳定性 [18] .…”