Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

Abstract

indium gallium arsenide (InGaAs), mercury cadmium telluride (HgCdTe), gallium antimonide (GaSb), and indium arsenide (InAs), exhibit higher detectivity (D*), making them useful for infrared (IR) optical devices with a spectral range of up to 15 000 nm and D* as high as ≈10 14 Jones. However, employing these conventional photodetectors in commercial applications is challenging due to several factors, including narrow bandgap, complex and expensive fabrication process, and low-temperature operation mode. [2] Usually, conventional bulk semiconductor materials, even in the form of thin films, cannot be tempered. Using these materials to develop transparent, flexible, and bendable devices is challenging. Si possesses an indirect energy bandgap (1.12 eV) that is suitable for visible to nearinfrared (NIR) spectrum but is significantly limited beyond the NIR spectrum. Therefore, there is an increased need for novel materials that can overcome the limitations of bulk Si for broadband photodetection and can be suitable for developing advanced electronic and optoelectronic devices at low cost. Compared with conventional materials-based photodetectors, 2D materialsbased photo detectors are very sensitive to broadband spectrum owing to their tunable bandgap, which varies from 0 to 3 eV, as shown in Figure 1. [3] 2D materials-based photodetectors show a broad spectrum and excellent stability and thus can operate at room temperature. [4] 2D materials-based photodetectors not only show broaden spectrum but also show excellent stability and thus can operate at room temperature. [1b,5] The discovery of 2D transition metal dichalcogenides (TMDCs) materials has invoked great research interests in nanoelectronic and optoelectronic devices owing to their fascinating electronic and optoelectronic properties. In 2004, A. K. Geim and K. Novoselov assembled the graphene in the laboratory by mechanical exfoliation at room temperature. [6] According to the crystalline structure, 2D TMDCs layered materials can be divided into different prismatic phases such as hexagonal, octahedral, and tetragonal. In 2D TMDCs, each unit (MX2) is composed of a transition metal (M) layer sandwiched between two chalcogens (X) atomic layers. [3e,7] The 2D TMDCs materials family is a continuously emerging class of material systems with more than 150 different types of layered materials that can easily be exfoliated from the bulk crystals and possess distinctive features. [8] For instance, graphene with zero bandgap shows linear depression near the Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband...

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