2015
DOI: 10.1016/j.apsusc.2015.07.063
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Research on titanium nitride thin films deposited by reactive magnetron sputtering for MEMS applications

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Cited by 32 publications
(16 citation statements)
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“…The presence of three peaks are marked out on the XRD pattern for all thin films as shown in Figure 3. These peaks correspond to the (111), (200), and (220) planes, respectively, which were reported for TiN thin films [30] and TiN x O y thin films [8], suggesting some overlapping of the signals with those obtained from the substrate (111). The SS substrate showed (111) peak at angle 2θ = 44.49.…”
Section: Sem Study and Surface Topographysupporting
confidence: 62%
“…The presence of three peaks are marked out on the XRD pattern for all thin films as shown in Figure 3. These peaks correspond to the (111), (200), and (220) planes, respectively, which were reported for TiN thin films [30] and TiN x O y thin films [8], suggesting some overlapping of the signals with those obtained from the substrate (111). The SS substrate showed (111) peak at angle 2θ = 44.49.…”
Section: Sem Study and Surface Topographysupporting
confidence: 62%
“…Based on the data obtained for the deflection of the tip when scanning a probe by contact mode, the friction force between the AFM tip and the deposited films was calculated using the equation (1) [17]:…”
Section: Theoretical Formulamentioning
confidence: 99%
“…(1) where F f represents the friction force between the tip and the tested films, dz is the deflection of the tip, r is a constant (r=0.33), G is the shear modulus (for silicon: G=50.92•10 -3 N•μm -2 [18]), s is tip height (s=15 μm) while h, b and l are the dimensions of the cantilever that are specified in the previous section. The data obtained from the spectroscopy in point tests allowed us to determine the work of adhesion, W a , using the following formula [17]:…”
Section: Theoretical Formulamentioning
confidence: 99%
“…The deposition of titanium nitride films was done by direct current reactive magnetron sputtering method, using 99.99 % purity titanium target and silicon Si (100) substrate. The experimental procedure details are presented in previously published work of the authors [4]. The parameters for titanium nitride films deposition were: (i) deposition time (10, 20 and 40 minutes) with the substrate (RT) at room temperature, (ii) deposition time (20 minutes) with the substrate at a temperature of 300 °C and (iii) deposition time (20 minutes) and polarization of the substrate at -40 V and -90 V. These studies were conducted in order to determine the influence of the deposition conditions on the structural and optical properties of titanium nitride films destined for MEMS devices applications.…”
Section: Deposition Of Titanium Nitride Thin Filmsmentioning
confidence: 99%
“…Titanium nitride (TiN) thin films were studied by many researchers due to their excellent properties, especially mechanical and tribological properties, corrosion resistance, wear resistance and thermodynamic stability [1][2][3]. Due to these properties, titanium nitride thin films can be used in a wide range of applications like: diffusion barriers for micro-electric devices, optical coatings with antireflection and antistatic properties, electrodes, biomedicine and hard coatings for tools and so on [4][5][6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%