Research on Time Jitter of GaAs Photoconductive Semiconductor Switches in the Negative Differential Mobility Region

Zhang, Lin; Shi, Wei; Cao, Juncheng; Wang, Shaoqiang; Dong, Chengang; Yang, Lei

doi:10.1109/led.2018.2886477

Cited by 13 publications

(2 citation statements)

References 14 publications

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“…It has the advantages of fast response, sub-picoseconds trigger jitter, and high output power, and has a wide application background in the field of ultrafast optoelectronics. [4][5][6] One of the main applications is the generation of THz radiation by using femtosecond laser to trigger a GaAs photoconductive antenna (PCA). At present, all GaAs PCAs are operated with the linear mode.…”

Section: Introductionmentioning

confidence: 99%

A new nonlinear photoconductive terahertz radiation source based on photon-activated charge domain quenched mode*

Shi¹,

Liu²,

Dong³

et al. 2020

Chinese Phys. B

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We present a high-performance terahertz (THz) radiation source based on the photon-activated charge domain (PACD) quenched mode of GaAs photoconductive antennas (GaAs PCA). The THz radiation characteristics of the GaAs PCA under different operating modes are studied. Compared with the linear mode, the intensity of THz wave radiated by the GaAs PCA can be greatly enhanced due to the avalanche multiplication effect of carriers in the PACD quenched mode. The results show that when the carrier multiplication ratio is 16.92, the peak-to-peak value of THz field radiated in the PACD quenched mode increases by as much as about 4.19 times compared to the maximum values in the linear mode.

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Section: Introductionmentioning

confidence: 99%

A new nonlinear photoconductive terahertz radiation source based on photon-activated charge domain quenched mode*

Shi¹,

Liu²,

Dong³

et al. 2020

Chinese Phys. B

Self Cite

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“…In addition, the rise-time decreases with increasing (external) bias voltage [13]. Due to the influence of negative differential mobility (NDM), an optimal time jitter is produced about 15 ps [14]. More importantly, under certain external conditions such as triggering laser energy and bias electric field, the characteristics of terahertz radiation (such as radiant power, frequency, waveform and spatial distribution) generated by SI-GaAs PCA are mainly determined by the spatial distribution and dynamic transmission of photogenerated carriers.…”

Section: Introductionmentioning

confidence: 99%

Multi-Energy Valley Scattering Characteristics for a SI-GaAs-Based Terahertz Photoconductive Antenna in Linear Mode

2019

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In this paper, the relationship between the terahertz radiation and the spatial distribution of photogenerated carriers under different bias electric field is studied. Terahertz pulses and the photocurrent of SI-GaAs photoconductive antenna are measured by the terahertz time-domain spectroscopy system. The occupancy rate for photogenerated carriers for different energy valleys is obtained by comparing the photocurrent of terahertz field integrating with respect to time with the photocurrent measured by oscilloscope. Results indicate that 93.04% of all photogenerated carriers are located in the Γ valley when the bias electric field is 3.33 kV/cm, and 68.6% of all photogenerated carriers are transferred to the satellite valley when the bias electric field is 20.00 kV/cm. With the bias electric field increasing, the carrier occupancy rate for the satellite valley tends to saturate at 72.16%. In order to obtain the carrier occupancy rate for the satellite valley and saturate value at the high bias electric field, an ensemble Monte Carlo simulation based on the theory of photo-activated charge domain is developed.

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Optimization design of electrode structure of GaAs photoconductive semiconductor switch

Wang,

Tian,

Shi

et al. 2023

AIP Advances

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Previous studies revealed that changing the electrode structures of a gallium arsenide photoconductive semiconductor switch (GaAs PCSS) can significantly affect the local electric field and current density at the electrodes. Knowing the optimization of the electrode structures of GaAs PCSS can improve the withstand voltage performance and current carrying capability. In this work, we optimize the surface contact electrode structure of GaAs PCSS, and numerical simulations are performed to systematically study the electric field and current density distribution in the bulk of the device. The result shows that the maximum transverse current density and maximum longitudinal current density of the embedded 172° isosceles trapezoid electrode structure are smaller than other kinds of electrode structures, which is the most favorable for improving the withstand voltage and current carrying capability of GaAs PCSS.

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Research on Time Jitter of GaAs Photoconductive Semiconductor Switches in the Negative Differential Mobility Region

Cited by 13 publications

References 14 publications

A new nonlinear photoconductive terahertz radiation source based on photon-activated charge domain quenched mode*

A new nonlinear photoconductive terahertz radiation source based on photon-activated charge domain quenched mode*

Multi-Energy Valley Scattering Characteristics for a SI-GaAs-Based Terahertz Photoconductive Antenna in Linear Mode

Optimization design of electrode structure of GaAs photoconductive semiconductor switch

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