Research on the Magnetism of Yttrium Doped Zinc Oxide Film

Abstract

The magnetism of Y doped ZnO film was calculated by using an accurate full-potential linerized plane-wave and supercell method. To analyzing the results, we find that: The ZnO film containing Zn vacancies is magnetic and the origin of magnetism is Zn vacancies; The Y ions in Y doped ZnO film is +3 and non-magnetic; The formation energy of Zn vacancies in the Y doped ZnO film is smaller than in the ZnO film, so Y favors the formation of VZn; The Y doped ZnO film containing Zn vacancies is magnetic.