Research on the influence of PIN diode on limiter performance in power limiter

Wang, Ziliang; Cao, Hefei; Zhang, Chuangchuang

doi:10.1109/mape.2017.8250841

Cited by 9 publications

(3 citation statements)

References 2 publications

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“…A low insertion loss of 0.3 dB has also been reported for a diamond diode based RP at an operation frequency of 1 GHz [9]. However, for a diode-based RP, typically a tradeoff often has to be made between C off and R on [7][8][9]. Although diode-based RPs have made steady progress, they still face some important challenges, such as insufficient power compression, inadequacy in tuning their threshold power level (the input power with 1-dB gain compression), and sensitivity to frequency change.…”

Section: Introductionmentioning

confidence: 89%

“…An RP allows input power below a certain value to pass through ideally without loss, and attenuating input signal strength when it exceeds the threshold. A number of device technologies have been developed to achieve RF and microwave RPs, including Schottky barrier diodes (SBDs) [5][6][7], p-i-n diodes [3,8,9], and transistors [10][11][12]. Employing a steep-mesa technology, a gallium nitride (GaN) SBD based RP demonstrated a low on-resistance (R ON ) and a power compression of 3.3 dB with a corresponding input power of 20 dBm at 2 GHz [7].…”

Section: Introductionmentioning

confidence: 99%

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Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection

Song

Guo

et al. 2022

Electronics

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This paper reports a high-performance microwave receiver protector (RP) based on a single gallium nitride (GaN) high electron mobility transistor (HEMT) at an operation frequency of 30 to 3000 MHz. The HEMT-based RP exhibits multi features: high power compression, constant output power, tunable threshold power level, and insensitivity to frequency variation. With a low drain voltage (Vds) of 3 V, constant output power of 9.9 dBm was acquired for input power over its threshold power of 3.2 dBm. Power compression of 13.3 dB was achieved at the input power of Pin = 20 dBm. In addition, adjustable threshold power level Pth could be obtained by merely tuning drain voltage. Transducer gain measurement results were employed to explain the occurrence of output power saturation. Relatively higher Pth was linked to wider gate voltage swing which extended the linear region of the Pout-Pin characteristic. In addition, the GaN HEMT’s power compression capability shows great immunity to frequency variation, which is promising for protecting sensitive receiver components at both low and high frequencies. Finally, the phase shift of the GaN HEMT RP at high input power was measured and analyzed by the nonlinear behaviors of input capacitance Cgs.

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Section: Introductionmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection

Song

Guo

et al. 2022

Electronics

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“…With the development of radar solid-state, most existing radars adopt PIN limiters for protection [3] . In the research on existing PIN limiters, the tolerance threshold and nonlinear performance of PIN limiter [4] are mainly studied from the aspects of PIN diode modeling and heating simulation [5][6][7] , PIN diode DC voltage injection [8] and PIN limiter RF injection [9,10] , etc., but few studies have been conducted on the radar receiving front end in combination with limiter and low noise amplifier. In this paper, the RF injection test is conducted on the radar receiving front-end system, the tolerance threshold is measured, the relationship between the damage of the receiving front-end and the injected signal power, pulse width, duration, and other factors is studied, and the influence of high-power microwave weapons on radar at different distances is analyzed, which can provide theoretical support for the RF front-end protection design of radar.…”

Section: Introductionmentioning

confidence: 99%

Experimental Study of High Power Microwave Injection in Radar Receiving Front-end

Hu,

Yang,

Meng

et al. 2023

J. Phys.: Conf. Ser.

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In order to study the tolerance threshold and damage process of radar receiving front end against high power microwave pulse attack, the relationship between the damage of receiving front end and injected signal power, pulse width, and duration was obtained by injection test. The experimental results show that the damage of PIN limiter by high power microwave is a slow worsening process near the damage threshold. Based on the test results, the radar withstanding range of high-power microwave weapon attack is calculated theoretically, which can provide theoretical support for the radar receiving front-end design.

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