Research on the Characteristics of Silicon MOS‐Like Light‐ Emitting Structure by Utilizing the Technology of Field‐Induced Optical Radiation Mechanisms

Abstract

As a well-known core material, silicon is becoming one of the most promising materials of photonic integration field. The chapter provides the research of integrated silicon MOS-like light-emitting structure utilizing the technology of field-induced optical radiation mechanisms. The silicon light-emitting device (Si-LED) plays an important role in realizing the on-chip optical interconnects, but Si-LED integrating on bulk silicon is facing many challenges due to the hybrid integration. In addition to be fully compatible with the standard complementary-metal-oxide-semiconductor (CMOS) process technology, the Si-LED also avoids the challenges that are mentioned above through integrating with bulk silicon substrate monolithically.